{"created":"2021-03-01T06:34:13.793859+00:00","id":26315,"links":{},"metadata":{"_buckets":{"deposit":"1be6c348-d7c7-44ee-8b65-0ba2fceb00a8"},"_deposit":{"id":"26315","owners":[],"pid":{"revision_id":0,"type":"depid","value":"26315"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00026315","sets":["673:674:675"]},"author_link":["79295","79296","79297","79298","79299","79300","79301","79302"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2018-05-14","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"5","bibliographicPageStart":"1700387","bibliographicVolumeNumber":"255","bibliographic_titles":[{"bibliographic_title":"physica status solidi (b)","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"A gallium nitride (GaN) epitaxial layer with a low density of threading dislocations is successfully grown on a silicon substrate by using in situ gas etching. Silicon nitride (SiNx) film is used as a mask, and ammonia is intermittently supplied in hydrogen ambient during the etching. After etching, high‐density deep pits appeared on the surface of a GaN template layer and corresponded to the threading dislocations in the layer. In this novel method, before growing an additional GaN layer on the template GaN layer, a second SiNx layer is deposited after the etching process, and this layer prevents GaN nuclei from growing on the upper side‐walls of the pits. By using this method, the density of threading dislocations of the GaN surface is reduced to 6.7 × 10^7 cm^−2. This method is cost effective, completing all the necessary processes in one growth run without taking samples out from a metalorganic chemical vapor deposition (MOCVD) reactor. ","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"ファイル公開：2019-05-14","subitem_description_language":"ja","subitem_description_type":"Other"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Wiley","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1002/pssb.201700387","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"This is the peer reviewed version of the following article: [Matsumoto, K. , Ono, T. , Honda, Y. , Yamamoto, T. , Usami, S. , Kushimoto, M. , Murakami, S. and Amano, H. (2018), Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching. Phys. Status Solidi B, 255: 1700387. doi:10.1002/pssb.201700387], which has been published in final form at [https://doi.org/10.1002/pssb.201700387]. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions.","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"author"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0370-1972","subitem_source_identifier_type":"PISSN"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Matsumoto, Koji","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"79295","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ono, Toshiaki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"79296","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Honda, Yoshio","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"79297","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yamamoto, Tetsuya","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"79298","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Usami, Shigeyoshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"79299","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kushimoto, Maki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"79300","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Murakami, Satoshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"79301","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Amano, Hiroshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"79302","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2019-05-14"}],"displaytype":"detail","filename":"Matsumoto_PSSB_255_5_1700387.pdf","filesize":[{"value":"913.6 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"Matsumoto_PSSB_255_5_1700387","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/26315/files/Matsumoto_PSSB_255_5_1700387.pdf"},"version_id":"2987bbec-f8f6-47c2-8b45-420eed365d37"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"GaN-on-Si","subitem_subject_scheme":"Other"},{"subitem_subject":"threading dislocation","subitem_subject_scheme":"Other"},{"subitem_subject":"in-situ etching","subitem_subject_scheme":"Other"},{"subitem_subject":"nano-pit","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["675"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2018-08-20"},"publish_date":"2018-08-20","publish_status":"0","recid":"26315","relation_version_is_last":true,"title":["Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:16:47.687364+00:00"}