{"created":"2021-03-01T06:36:17.115192+00:00","id":28219,"links":{},"metadata":{"_buckets":{"deposit":"2deac8a4-5227-44d6-9755-c04ff6d039f7"},"_deposit":{"id":"28219","owners":[],"pid":{"revision_id":0,"type":"depid","value":"28219"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00028219","sets":["673:674:675"]},"author_link":["91866","91867","91868","91869","91870","91871","91872","91873","91874","91875"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2019-02","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"2","bibliographicPageStart":"026502","bibliographicVolumeNumber":"12","bibliographic_titles":[{"bibliographic_title":"Applied Physics Express","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"A simple structure with high breakdown voltage and a low leakage current of a vertical GaN p–n diode on a GaN free-standing substrate is demonstrated. We describe a vertical p–n diode with a simple edge termination that has a drift layer etched deeply and vertically. A device simulation revealed that the electric field was more relaxed at the device edge and applied uniformly in the entire device with increasing etching depth. We fabricated the simulated structure and succeeded in reducing the leakage current and improving the breakdown voltage. With this structure, a stable avalanche breakdown can be observed.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"ファイル公開：2020-02-01","subitem_description_language":"ja","subitem_description_type":"Other"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IOP publishing","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.7567/1882-0786/aafdb9","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"This is an author-created, un-copyedited version of an article published in {Applied Physics Express}. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at {https://doi.org/10.7567/1882-0786/aafdb9}.　“This Accepted Manuscript is available for reuse under a CC BY-NC-ND 3.0 licence after the 12 month embargo period provided that all the terms of the licence are adhered to”","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"author"}]},"item_10_source_id_61":{"attribute_name":"ISSN（print）","attribute_value_mlt":[{"subitem_source_identifier":"1882-0778","subitem_source_identifier_type":"PISSN"}]},"item_10_source_id_62":{"attribute_name":"ISSN（Online）","attribute_value_mlt":[{"subitem_source_identifier":"1882-0786","subitem_source_identifier_type":"EISSN"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Fukushima, Hayata","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"91866","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Usami, Shigeyoshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"91867","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ogura, Masaya","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"91868","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ando, Yuto","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"91869","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Tanaka, Atsushi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"91870","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Deki, Manato","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"91871","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kushimoto, Maki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"91872","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nitta, Shugo","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"91873","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Honda, Yoshio","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"91874","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Amano, Hiroshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"91875","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-02-01"}],"displaytype":"detail","filename":"fukushima.pdf","filesize":[{"value":"856.8 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"fukushima","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/28219/files/fukushima.pdf"},"version_id":"ce810876-d4b7-4608-8339-6e32d8391bd3"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Vertical GaN p–n diode with deeply etched mesa and the capability of avalanche breakdown","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Vertical GaN p–n diode with deeply etched mesa and the capability of avalanche breakdown","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["675"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2019-06-12"},"publish_date":"2019-06-12","publish_status":"0","recid":"28219","relation_version_is_last":true,"title":["Vertical GaN p–n diode with deeply etched mesa and the capability of avalanche breakdown"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:20:37.627476+00:00"}