{"created":"2021-03-01T06:36:17.181011+00:00","id":28220,"links":{},"metadata":{"_buckets":{"deposit":"428d4173-51fe-40bd-9c35-12b21495d385"},"_deposit":{"id":"28220","owners":[],"pid":{"revision_id":0,"type":"depid","value":"28220"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00028220","sets":["673:674:675"]},"author_link":["91876","91877","91878","91879","91880","91881","91882","91883"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2019-04-15","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"83","bibliographicPageStart":"78","bibliographicVolumeNumber":"512","bibliographic_titles":[{"bibliographic_title":"Journal of Crystal Growth","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"This study examines the effect of (000−1) GaN substrate misorientation on the residual impurities and surface morphology of N-polar GaN grown by metalorganic vapor-phase epitaxy. Carbon, silicon, and oxygen concentrations decreased with increasing GaN substrate misorientation angle, with the lowest impurity concentration achieved for a misorientation angle of 2° toward the m-axis, with 6×10^15cm^−3 carbon, 6×10^15cm^−3 silicon, and 4×10^17cm^−3 oxygen atoms. The oxygen concentration was measured at a depth of 0.5μm below the wafer surface, and the oxygen concentration decreased with increasing thickness. The incorporation of carbon and oxygen revealed a strong dependence on the misorientation angle. The step distance height of the steps parallel to the [11−20] direction (or perpendicular to the [1−100] m-direction) was confirmed to be a double-height layer step. This phenomenon indicated that m-direction steps are stable for N-polar growth in GaN. In cases of large misorientation toward the m-axis in of the GaN substrate it was difficult to control the misorientation perpendicular to the nominal direction leading to a-axis direction by wafer bowing at wafer manufacturing. Therefore, step-bunching was generated for each symmetric m-axis due to an increase in the compound's off-angle, thus causing the surface roughness to become large.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"ファイル公開：2021-04-15","subitem_description_language":"ja","subitem_description_type":"Other"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Elsevier","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1016/j.jcrysgro.2019.02.013","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"© 2019. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"author"}]},"item_10_source_id_61":{"attribute_name":"ISSN（print）","attribute_value_mlt":[{"subitem_source_identifier":"0022-0248","subitem_source_identifier_type":"PISSN"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Nagamatsu, Kentaro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"91876","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ando, Yuto","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"91877","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kono, Tsukasa","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"91878","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Cheong, Heajeong","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"91879","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nitta, Shugo","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"91880","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Honda, Yoshio","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"91881","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Pristovsek, Markus","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"91882","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Amano, Hiroshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"91883","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2021-04-15"}],"displaytype":"detail","filename":"N-polar_accepted_Nagamatsu.pdf","filesize":[{"value":"806.2 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"N-polar_accepted_Nagamatsu","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/28220/files/N-polar_accepted_Nagamatsu.pdf"},"version_id":"f8f1e906-002c-4e0a-929c-5c08bf43baff"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Impurities","subitem_subject_scheme":"Other"},{"subitem_subject":"Surfaces","subitem_subject_scheme":"Other"},{"subitem_subject":"Metalorganic vapor-phase epitaxy","subitem_subject_scheme":"Other"},{"subitem_subject":"Nitrides","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["675"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2019-06-12"},"publish_date":"2019-06-12","publish_status":"0","recid":"28220","relation_version_is_last":true,"title":["Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:20:37.726893+00:00"}