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Nonpolar m-plane AlxGa1-xN layers grown on m-plane sapphire by MOVPE
http://hdl.handle.net/2237/00030417
http://hdl.handle.net/2237/000304174fe7c6fa-cc62-4fd7-9d95-53308e0e74e5
名前 / ファイル | ライセンス | アクション |
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m-AlGaN_20181012 (3.3 MB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2019-06-12 | |||||
タイトル | ||||||
タイトル | Nonpolar m-plane AlxGa1-xN layers grown on m-plane sapphire by MOVPE | |||||
言語 | en | |||||
著者 |
Dinh, Duc V.
× Dinh, Duc V.× Amano, Hiroshi× Pristovsek, Markus |
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アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | © 2019. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/ | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Crystal morphology | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Metalorganic vapour phase epitaxy | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Nitrides | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | AlGaN | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Semiconducting aluminium compounds | |||||
抄録 | ||||||
内容記述 | Heteroepitaxial growth of single-phase nonpolar (10¯10) m-plane AlxGa1-xN layers on m-plane sapphire substrates was investigated by metalorganic vapour phase epitaxy. Different Al/Ga gas phase ratios were used to adjust the AlN mole fraction over the entire range of composition. All m-plane AlGaN layers show an orthorhombic distortion in the wurtzite unit cell due to anisotropic in-plane strain. This distortion decreases with increasing AlN mole fraction due to a decreased anisotropic biaxial strain. The AlN mole fraction of m-plane layers and c-plane co-loaded layers estimated by X-ray diffraction is comparable. This is consistent with their comparable energy bandgaps, which were estimated from room-temperature dielectric functions. The dependence of the energy bandgap on composition indicates a bowing parameter of about 0.9eV. The crystal-field splitting energy is found for the m-plane layers with a bowing parameter bcf of about −0.15eV. | |||||
言語 | en | |||||
内容記述タイプ | Abstract | |||||
内容記述 | ||||||
内容記述 | ファイル公開:2021-04-15 | |||||
言語 | ja | |||||
内容記述タイプ | Other | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | Elsevier | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
出版タイプ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1016/j.jcrysgro.2019.02.020 | |||||
ISSN(print) | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0022-0248 | |||||
書誌情報 |
en : Journal of Crystal Growth 巻 512, p. 100-104, 発行日 2019-04-15 |
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著者版フラグ | ||||||
値 | author |