{"_buckets": {"deposit": "bc673457-3da1-428e-9e0a-d1f4bbb1e3d0"}, "_deposit": {"id": "28221", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "28221"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00028221"}, "item_10_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2019-04-15", "bibliographicIssueDateType": "Issued"}, "bibliographicPageEnd": "104", "bibliographicPageStart": "100", "bibliographicVolumeNumber": "512", "bibliographic_titles": [{"bibliographic_title": "Journal of Crystal Growth"}]}]}, "item_10_description_4": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "Heteroepitaxial growth of single-phase nonpolar (10\u00af10) m-plane AlxGa1-xN layers on m-plane sapphire substrates was investigated by metalorganic vapour phase epitaxy. Different Al/Ga gas phase ratios were used to adjust the AlN mole fraction over the entire range of composition. All m-plane AlGaN layers show an orthorhombic distortion in the wurtzite unit cell due to anisotropic in-plane strain. This distortion decreases with increasing AlN mole fraction due to a decreased anisotropic biaxial strain. The AlN mole fraction of m-plane layers and c-plane co-loaded layers estimated by X-ray diffraction is comparable. This is consistent with their comparable energy bandgaps, which were estimated from room-temperature dielectric functions. The dependence of the energy bandgap on composition indicates a bowing parameter of about 0.9eV. The crystal-field splitting energy is found for the m-plane layers with a bowing parameter bcf of about \u22120.15eV.", "subitem_description_type": "Abstract"}]}, "item_10_description_5": {"attribute_name": "\u5185\u5bb9\u8a18\u8ff0", "attribute_value_mlt": [{"subitem_description": "\u30d5\u30a1\u30a4\u30eb\u516c\u958b\uff1a2021-04-15", "subitem_description_type": "Other"}]}, "item_10_publisher_32": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "Elsevier"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1016/j.jcrysgro.2019.02.020", "subitem_relation_type_select": "DOI"}}]}, "item_10_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "\u00a9 2019. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/"}]}, "item_10_select_15": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "author"}]}, "item_10_source_id_61": {"attribute_name": "ISSN\uff08print\uff09", "attribute_value_mlt": [{"subitem_source_identifier": "0022-0248", "subitem_source_identifier_type": "ISSN"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Dinh, Duc V."}], "nameIdentifiers": [{"nameIdentifier": "91884", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Amano, Hiroshi"}], "nameIdentifiers": [{"nameIdentifier": "91885", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Pristovsek, Markus"}], "nameIdentifiers": [{"nameIdentifier": "91886", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2021-04-15"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "m-AlGaN_20181012.pdf", "filesize": [{"value": "3.3 MB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 3300000.0, "url": {"label": "m-AlGaN_20181012", "url": "https://nagoya.repo.nii.ac.jp/record/28221/files/m-AlGaN_20181012.pdf"}, "version_id": "3e9d646f-2f65-4c8d-b97c-221765eceae8"}]}, "item_keyword": {"attribute_name": "\u30ad\u30fc\u30ef\u30fc\u30c9", "attribute_value_mlt": [{"subitem_subject": "Crystal morphology", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Metalorganic vapour phase epitaxy", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Nitrides", "subitem_subject_scheme": "Other"}, {"subitem_subject": "AlGaN", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Semiconducting aluminium compounds", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Nonpolar m-plane AlxGa1-xN layers grown on m-plane sapphire by MOVPE", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Nonpolar m-plane AlxGa1-xN layers grown on m-plane sapphire by MOVPE"}]}, "item_type_id": "10", "owner": "1", "path": ["673/674/675"], "permalink_uri": "http://hdl.handle.net/2237/00030417", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_value": "2019-06-12"}, "publish_date": "2019-06-12", "publish_status": "0", "recid": "28221", "relation": {}, "relation_version_is_last": true, "title": ["Nonpolar m-plane AlxGa1-xN layers grown on m-plane sapphire by MOVPE"], "weko_shared_id": null}