{"created":"2021-03-01T06:36:17.246251+00:00","id":28221,"links":{},"metadata":{"_buckets":{"deposit":"bc673457-3da1-428e-9e0a-d1f4bbb1e3d0"},"_deposit":{"id":"28221","owners":[],"pid":{"revision_id":0,"type":"depid","value":"28221"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00028221","sets":["673:674:675"]},"author_link":["91884","91885","91886"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2019-04-15","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"104","bibliographicPageStart":"100","bibliographicVolumeNumber":"512","bibliographic_titles":[{"bibliographic_title":"Journal of Crystal Growth","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Heteroepitaxial growth of single-phase nonpolar (10¯10) m-plane AlxGa1-xN layers on m-plane sapphire substrates was investigated by metalorganic vapour phase epitaxy. Different Al/Ga gas phase ratios were used to adjust the AlN mole fraction over the entire range of composition. All m-plane AlGaN layers show an orthorhombic distortion in the wurtzite unit cell due to anisotropic in-plane strain. This distortion decreases with increasing AlN mole fraction due to a decreased anisotropic biaxial strain. The AlN mole fraction of m-plane layers and c-plane co-loaded layers estimated by X-ray diffraction is comparable. This is consistent with their comparable energy bandgaps, which were estimated from room-temperature dielectric functions. The dependence of the energy bandgap on composition indicates a bowing parameter of about 0.9eV. The crystal-field splitting energy is found for the m-plane layers with a bowing parameter bcf of about −0.15eV.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"ファイル公開：2021-04-15","subitem_description_language":"ja","subitem_description_type":"Other"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Elsevier","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1016/j.jcrysgro.2019.02.020","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"© 2019. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"author"}]},"item_10_source_id_61":{"attribute_name":"ISSN（print）","attribute_value_mlt":[{"subitem_source_identifier":"0022-0248","subitem_source_identifier_type":"PISSN"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Dinh, Duc V.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"91884","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Amano, Hiroshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"91885","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Pristovsek, Markus","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"91886","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2021-04-15"}],"displaytype":"detail","filename":"m-AlGaN_20181012.pdf","filesize":[{"value":"3.3 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"m-AlGaN_20181012","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/28221/files/m-AlGaN_20181012.pdf"},"version_id":"3e9d646f-2f65-4c8d-b97c-221765eceae8"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Crystal morphology","subitem_subject_scheme":"Other"},{"subitem_subject":"Metalorganic vapour phase epitaxy","subitem_subject_scheme":"Other"},{"subitem_subject":"Nitrides","subitem_subject_scheme":"Other"},{"subitem_subject":"AlGaN","subitem_subject_scheme":"Other"},{"subitem_subject":"Semiconducting aluminium compounds","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Nonpolar m-plane AlxGa1-xN layers grown on m-plane sapphire by MOVPE","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Nonpolar m-plane AlxGa1-xN layers grown on m-plane sapphire by MOVPE","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["675"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2019-06-12"},"publish_date":"2019-06-12","publish_status":"0","recid":"28221","relation_version_is_last":true,"title":["Nonpolar m-plane AlxGa1-xN layers grown on m-plane sapphire by MOVPE"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:20:27.511034+00:00"}