@article{oai:nagoya.repo.nii.ac.jp:00028224, author = {Cai, Wei and Yuan, Jialei and Ni, Shuyu and Shi, Zheng and Zhou, Weidong and Liu, Yuhuai and Wang, Yongjin and Amano, Hiroshi}, issue = {3}, journal = {Applied Physics Express}, month = {Mar}, note = {We report here a GaN-based resonant cavity light-emitting diode (RCLED) with top and bottom dielectric TiO2/SiO2 distributed Bragg reflector (DBR) mirrors on a silicon substrate. High data transmission in free space at 200 Mbps with an opening in the eye diagram was achieved. The results show that the combination of GaN-based LED on silicon and double sided dielectric DBR mirror deposition enables a manufacturable process which provides a unique opportunity for commercialization of RCLED in future solid-state lighting and visible light communication applications., ファイル公開:2020-03-01}, title = {GaN-on-Si resonant-cavity light-emitting diode incorporating top and bottom dielectric distributed Bragg reflectors}, volume = {12}, year = {2019} }