{"created":"2021-03-01T06:36:17.445234+00:00","id":28224,"links":{},"metadata":{"_buckets":{"deposit":"a93dbca9-4020-4b5b-b2d6-13a264581c2e"},"_deposit":{"id":"28224","owners":[],"pid":{"revision_id":0,"type":"depid","value":"28224"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00028224","sets":["673:674:675"]},"author_link":["91898","91899","91900","91901","91902","91903","91904","91905"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2019-03","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"3","bibliographicPageStart":"032004","bibliographicVolumeNumber":"12","bibliographic_titles":[{"bibliographic_title":"Applied Physics Express","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We report here a GaN-based resonant cavity light-emitting diode (RCLED) with top and bottom dielectric TiO2/SiO2 distributed Bragg reflector (DBR) mirrors on a silicon substrate. High data transmission in free space at 200 Mbps with an opening in the eye diagram was achieved. The results show that the combination of GaN-based LED on silicon and double sided dielectric DBR mirror deposition enables a manufacturable process which provides a unique opportunity for commercialization of RCLED in future solid-state lighting and visible light communication applications.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"ファイル公開：2020-03-01","subitem_description_language":"ja","subitem_description_type":"Other"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IOP publishing","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.7567/1882-0786/ab023c","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"This is an author-created, un-copyedited version of an article published in {Applied Physics Express}. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at {https://doi.org/10.7567/1882-0786/ab023c}.　“This Accepted Manuscript is available for reuse under a CC BY-NC-ND 3.0 licence after the 12 month embargo period provided that all the terms of the licence are adhered to”","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"author"}]},"item_10_source_id_61":{"attribute_name":"ISSN（print）","attribute_value_mlt":[{"subitem_source_identifier":"1882-0778","subitem_source_identifier_type":"PISSN"}]},"item_10_source_id_62":{"attribute_name":"ISSN（Online）","attribute_value_mlt":[{"subitem_source_identifier":"1882-0786","subitem_source_identifier_type":"EISSN"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Cai, Wei","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"91898","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yuan, Jialei","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"91899","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ni, Shuyu","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"91900","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Shi, Zheng","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"91901","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Zhou, Weidong","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"91902","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Liu, Yuhuai","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"91903","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Wang, Yongjin","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"91904","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Amano, Hiroshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"91905","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-03-01"}],"displaytype":"detail","filename":"GaN-on-Si_resonant-cavity_light-emitting_diode.pdf","filesize":[{"value":"917.4 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"GaN-on-Si_resonant-cavity_light-emitting_diode","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/28224/files/GaN-on-Si_resonant-cavity_light-emitting_diode.pdf"},"version_id":"aae07be5-d80b-4c55-b735-319e86a85eae"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"GaN-on-Si resonant-cavity light-emitting diode incorporating top and bottom dielectric distributed Bragg reflectors","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"GaN-on-Si resonant-cavity light-emitting diode incorporating top and bottom dielectric distributed Bragg reflectors","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["675"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2019-06-12"},"publish_date":"2019-06-12","publish_status":"0","recid":"28224","relation_version_is_last":true,"title":["GaN-on-Si resonant-cavity light-emitting diode incorporating top and bottom dielectric distributed Bragg reflectors"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:20:38.454352+00:00"}