{"created":"2021-03-01T06:36:28.772123+00:00","id":28395,"links":{},"metadata":{"_buckets":{"deposit":"45b469d7-1960-4b65-a499-2877620dd991"},"_deposit":{"id":"28395","owners":[],"pid":{"revision_id":0,"type":"depid","value":"28395"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00028395","sets":["320:321:322"]},"author_link":["92906","92907","92908","92909","92910"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2019-08","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"5","bibliographicPageEnd":"4","bibliographicPageStart":"1","bibliographicVolumeNumber":"29","bibliographic_titles":[{"bibliographic_title":"IEEE Transactions on Applied Superconductivity","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"BaTbO3 (BTbO) is one of artificial pinning center materials and forms thick rectangular nanorods with diameters of ~20 nm when it is doped high. We expected that the rectangular na-norods would produce in-plane anisotropy of flux pinning. In this study, we investigated in-plane anisotropy of transport properties in BTbO-doped SmBa2Cu3Oy (SmBCO) films. SmBCO thin films with various contents of BTbO were fabricated by using a pulsed laser deposition method. To investigate the in-plane anisotropy, the critical current density Jc was measured at 77 K, 0-9 T, and Φ = 0° and 45°, where Φ was defined as an in-plane angle from the a or b-axes of SmBCO. To fix the direction of current in the films, the micro-bridges were fabricated with different Φ = 0° and 45°) by using the laser etching technique. As a result, Jc at Φ = 0° was higher than one at Φ = 45° in the films with BTbO contents of 12.0 and 20.0 vol.% at 77 K and at fields of 5 T or more. The anisotropy of Jc in high fields for current directions was possibly explained by the rectangular shape of the BTbO nanorods.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IEEE","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1109/TASC.2019.2906468","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"“© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.”","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"author"}]},"item_10_source_id_61":{"attribute_name":"ISSN（print）","attribute_value_mlt":[{"subitem_source_identifier":"1051-8223","subitem_source_identifier_type":"PISSN"}]},"item_10_source_id_62":{"attribute_name":"ISSN（Online）","attribute_value_mlt":[{"subitem_source_identifier":"1558-2515","subitem_source_identifier_type":"EISSN"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Kato, Hiroki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"92906","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Tsuchiya, Yuji","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"92907","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ichino, Yusuke","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"92908","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ichinose, Ataru","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"92909","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yoshida, Yutaka","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"92910","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2019-08-09"}],"displaytype":"detail","filename":"3MPo1C-02_Hiroki Kato_FINAL_VERSION.pdf","filesize":[{"value":"606.5 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"3MPo1C-02_Hiroki Kato_FINAL_VERSION","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/28395/files/3MPo1C-02_Hiroki Kato_FINAL_VERSION.pdf"},"version_id":"f0b65efa-50fc-44a2-96ac-ebdd04c66f8a"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Artificial pinning centers","subitem_subject_scheme":"Other"},{"subitem_subject":"BaTbO3","subitem_subject_scheme":"Other"},{"subitem_subject":"critical current density","subitem_subject_scheme":"Other"},{"subitem_subject":"high fields","subitem_subject_scheme":"Other"},{"subitem_subject":"high temperature superconductor","subitem_subject_scheme":"Other"},{"subitem_subject":"in-plane anisotropy","subitem_subject_scheme":"Other"},{"subitem_subject":"nanorod","subitem_subject_scheme":"Other"},{"subitem_subject":"SmBa2Cu3Oy","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"In-Plane Anisotropy of Transport Property in BaTbO3-Doped SmBa2Cu3Oy Films","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"In-Plane Anisotropy of Transport Property in BaTbO3-Doped SmBa2Cu3Oy Films","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["322"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2019-08-09"},"publish_date":"2019-08-09","publish_status":"0","recid":"28395","relation_version_is_last":true,"title":["In-Plane Anisotropy of Transport Property in BaTbO3-Doped SmBa2Cu3Oy Films"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:21:02.812153+00:00"}