@article{oai:nagoya.repo.nii.ac.jp:00028684, author = {Hajiri, T. and Ishino, S. and Matsuura, K. and Asano, H.}, issue = {5}, journal = {Applied Physics Letters}, month = {Jul}, note = {We report electrical current switching of noncollinear antiferromagnetic (AFM) Mn3GaN/Pt bilayers at room temperature. The Hall resistance of these bilayers can be manipulated by applying a pulse current of 1.5 × 10^6 A/cm^2, whereas no significant change is observed up to ∼10^8 A/cm^2 in Mn3GaN single films, indicating that the Pt layer plays an important role. In comparison with ferrimagnetic Mn3GaN/Pt bilayers, a lower electrical current switching of noncollinear AFM Mn3GaN is demonstrated, with a critical current density two orders of magnitude smaller. Our results highlight that a combination of a noncollinear AFM antiperovskite nitride and a spin-torque technique is a good platform for AFM spintronics., Published Online: 01 August 2019. ファイル公開:2020/08/01}, title = {Electrical current switching of the noncollinear antiferromagnet Mn3GaN}, volume = {115}, year = {2019} }