@article{oai:nagoya.repo.nii.ac.jp:00029021, author = {Gotoh, Kazuhiro and Mochizuki, Takeya and Kurokawa, Yasuyoshi and Usami, Noritaka}, issue = {22}, journal = {physica status solidi (a)}, month = {Nov}, note = {Carrier‐selective contacts prepared by atomic layer deposition (ALD) have received significant attention for developing high‐efficiency solar cells. Herein, the electrical properties of titanium oxide (TiOx) prepared by ALD are manipulated by modulating the deposition temperature during ALD. Tunable electrical properties are possible due to the existence of oxygen vacancies in TiOx prepared at low deposition temperatures. TiOx layers prepared at 100 and 150 °C provide a low contact resistivity and high passivation performance, respectively. A high carrier selectivity of 13.5 is achieved by stacking the TiOx layers prepared at 100 and 150 °C, compared with a single TiOx layer. Modulating the deposition temperature can, therefore, improve the electrical properties of ALD‐TiOx. This approach can be used to optimize the functionality of ALD‐based materials., ファイル公開:2020-11-01}, title = {Tuning the Electrical Properties of Titanium Oxide Bilayers Prepared by Atomic Layer Deposition at Different Temperatures}, volume = {216}, year = {2019} }