@article{oai:nagoya.repo.nii.ac.jp:00029333,
 author = {Tanaka, Yusuke and Takahashi, Kouji and Kuzumaki, Takuya and Yamamoto, Yuta and Hotta, Kunihiro and Harasawa, Ayumi and Miyoshi, Yasuhito and Yoshikawa, Hirofumi and Ouchi, Yukio and Ueno, Nobuo and Seki, Kazuhiko and Awaga, Kunio and Sakamoto, Kazuyuki},
 issue = {7},
 journal = {Physical Review B},
 month = {Aug},
 note = {The electronic band structure of a tetrakis(thiadiazole)porhyrazine (H2TTDPz) thin film prepared on SiO2, which is a system close to a real device one, was studied by photoelectron spectroscopy (PES). Although the film was grown on a bumpy surface, clear electronic band dispersion was observed along the surface-normal direction. The bandwidth of the highest occupied molecular orbital (HOMO) band was approximately 180 meV. By analyzing the PES result using the tight-binding method, the transfer integral for the π−π interaction, the effective mass of the HOMO hole, and the hole mobility were estimated to be approximately 45±10 meV, 1/m∗h=(0.14±0.03)/m0, and μh=8.2±1.8 cm^2/V s, respectively, at 100 K.},
 title = {Intermolecular band dispersion in a self-assembled phthalocyanine derivative film: The case of tetrakis(thiadiazole)porhyrazine},
 volume = {82},
 year = {2010}
}