{"created":"2021-03-01T06:37:31.151282+00:00","id":29337,"links":{},"metadata":{"_buckets":{"deposit":"6363d5f8-7576-4e52-9d53-c9c13ab43115"},"_deposit":{"id":"29337","owners":[],"pid":{"revision_id":0,"type":"depid","value":"29337"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00029337","sets":["336:695:696"]},"author_link":["96167","96168","96169"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2010-09","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"12","bibliographicPageStart":"123303","bibliographicVolumeNumber":"97","bibliographic_titles":[{"bibliographic_title":"Applied Physics Letters","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Dual-gate organic thin-film transistors (OTFTs) of octathio[8]circulene (1) with ionic liquid and SiO2 gate dielectrics lead to good transistor performance with a high on/off ratio (∼10^5), a low threshold voltage (∼−5 V), a low subthreshold slope (∼150 mV/decade), and low power operation, thus surpassing the performance of the single-gate OTFTs of 1. This operation is a promising method for improving the carrier concentrations in OTFTs and for realizing high-performance OTFTs.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"AIP Publishing","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1063/1.3491807","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.The following article appeared in (Applied Physics Letters. v.97, n.12, 2010, p.123303) and may be found at (http://dx.doi.org/10.1063/1.3491807).","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_10_source_id_61":{"attribute_name":"ISSN（print）","attribute_value_mlt":[{"subitem_source_identifier":"0003-6951","subitem_source_identifier_type":"PISSN"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Fujimoto, Takuya","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"96167","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Matsushita, Michio M.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"96168","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Awaga, Kunio","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"96169","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-02-19"}],"displaytype":"detail","filename":"1_3491807.pdf","filesize":[{"value":"934.7 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"1_3491807","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/29337/files/1_3491807.pdf"},"version_id":"1e69a9a9-49e4-482a-a061-dd770b412386"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Dual-gate field-effect transistors of octathio[8]circulene thin-films with ionic liquid and SiO2 gate dielectrics","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Dual-gate field-effect transistors of octathio[8]circulene thin-films with ionic liquid and SiO2 gate dielectrics","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["696"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2020-02-19"},"publish_date":"2020-02-19","publish_status":"0","recid":"29337","relation_version_is_last":true,"title":["Dual-gate field-effect transistors of octathio[8]circulene thin-films with ionic liquid and SiO2 gate dielectrics"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:22:31.358593+00:00"}