@article{oai:nagoya.repo.nii.ac.jp:00029397,
 author = {Zhang, Ziyi and Kushimoto, Maki and Sakai, Tadayoshi and Sugiyama, Naoharu and Schowalter, Leo J. and Sasaoka, Chiaki and Amano, Hiroshi},
 issue = {12},
 journal = {Applied Physics Express},
 month = {Nov},
 note = {We present a deep-ultraviolet semiconductor laser diode that operates under current injection at room temperature and at a very short wavelength. The laser structure was grown on the (0001) face of a single-crystal aluminum nitride substrate. The measured lasing wavelength was 271.8 nm with a pulsed duration of 50 ns and a repetition frequency of 2 kHz. A polarization-induced doping cladding layer was employed to achieve hole conductivity and injection without intentional impurity doping. Even with this undoped layer, we were still able to achieve a low operation voltage of 13.8 V at a lasing threshold current of 0.4 A., ファイル公開：2020-11-07},
 title = {A 271.8 nm deep-ultraviolet laser diode for room temperature operation},
 volume = {12},
 year = {2019}
}