{"created":"2021-03-01T06:37:53.911424+00:00","id":29679,"links":{},"metadata":{"_buckets":{"deposit":"9e288dad-7a9c-43e5-a3df-ded1f6f88e6d"},"_deposit":{"id":"29679","owners":[],"pid":{"revision_id":0,"type":"depid","value":"29679"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00029679","sets":["320:606:607"]},"author_link":["97279"],"item_12_alternative_title_19":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"study on atomic layer process of Aluminum compounds for semiconductor device fabrication","subitem_alternative_title_language":"en"}]},"item_12_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2020-03-25","bibliographicIssueDateType":"Issued"}}]},"item_12_date_granted_64":{"attribute_name":"学位授与年月日","attribute_value_mlt":[{"subitem_dategranted":"2020-03-25"}]},"item_12_degree_grantor_62":{"attribute_name":"学位授与機関","attribute_value_mlt":[{"subitem_degreegrantor":[{"subitem_degreegrantor_language":"ja","subitem_degreegrantor_name":"名古屋大学"},{"subitem_degreegrantor_language":"en","subitem_degreegrantor_name":"Nagoya University"}],"subitem_degreegrantor_identifier":[{"subitem_degreegrantor_identifier_name":"13901","subitem_degreegrantor_identifier_scheme":"kakenhi"}]}]},"item_12_degree_name_61":{"attribute_name":"学位名","attribute_value_mlt":[{"subitem_degreename":"博士(工学)","subitem_degreename_language":"ja"}]},"item_12_dissertation_number_65":{"attribute_name":"学位授与番号","attribute_value_mlt":[{"subitem_dissertationnumber":"甲第13116号"}]},"item_12_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"ETD"}]},"item_12_text_63":{"attribute_name":"学位授与年度","attribute_value_mlt":[{"subitem_text_value":"2019"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"福水, 裕之","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"97279","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-30"}],"displaytype":"detail","filename":"k13116_abstract.pdf","filesize":[{"value":"285.5 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"k13116_abstract","objectType":"abstract","url":"https://nagoya.repo.nii.ac.jp/record/29679/files/k13116_abstract.pdf"},"version_id":"f503c074-1bf3-4bab-89ac-0e47fd5f0d6c"},{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-30"}],"displaytype":"detail","filename":"k13116_review.pdf","filesize":[{"value":"112.6 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"k13116_review","objectType":"other","url":"https://nagoya.repo.nii.ac.jp/record/29679/files/k13116_review.pdf"},"version_id":"d3ce9dd0-e316-4700-8343-139a4b938c7f"},{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-30"}],"displaytype":"detail","filename":"k13116_thesis.pdf","filesize":[{"value":"5.6 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"k13116_thesis","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/29679/files/k13116_thesis.pdf"},"version_id":"3063bf62-f8a1-4f88-9cfa-9afd39bec6bb"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"doctoral thesis","resourceuri":"http://purl.org/coar/resource_type/c_db06"}]},"item_title":"アルミニウム化合物を用いた半導体デバイス製造における原子層プロセスに関する研究","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"アルミニウム化合物を用いた半導体デバイス製造における原子層プロセスに関する研究","subitem_title_language":"ja"}]},"item_type_id":"12","owner":"1","path":["607"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2020-04-02"},"publish_date":"2020-04-02","publish_status":"0","recid":"29679","relation_version_is_last":true,"title":["アルミニウム化合物を用いた半導体デバイス製造における原子層プロセスに関する研究"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:22:36.916802+00:00"}