@article{oai:nagoya.repo.nii.ac.jp:00030334,
 author = {Miki, R. and Zhao, K. and Hajiri, T. and Gegenwart, P. and Asano, H.},
 issue = {11},
 journal = {Journal of Applied Physics},
 month = {Mar},
 note = {We report the growth of noncollinear antiferromagnetic (AFM) Mn3Ni0.35Cu0.65N films and the orientation-dependent anomalous Hall effect (AHE) of (001) and (111) films due to the nonzero Berry curvature. We found that post-annealing at 500 ℃ can significantly improve the AHE signals, though using the appropriate post-annealing conditions is important. The AHE and magnetization loops show sharp flipping at the coercive field in (111) films, while (001) films are hard to saturate by a magnetic field. The anomalous Hall conductivity of (111) films is an order of magnitude larger than that of (001) films. The present results provide not only a better understanding of the AHE in Mn3XN systems but also further opportunities to study the unique phenomena related to noncollinear AFM., ファイル公開：2021/03/21},
 title = {Epitaxial growth and orientation-dependent anomalous Hall effect of noncollinear antiferromagnetic Mn3Ni0.35Cu0.65N films},
 volume = {127},
 year = {2020}
}