{"created":"2021-03-01T06:38:46.496102+00:00","id":30454,"links":{},"metadata":{"_buckets":{"deposit":"66ffe02a-c3e4-4ee4-bfff-dfcceca7c1f5"},"_deposit":{"id":"30454","owners":[],"pid":{"revision_id":0,"type":"depid","value":"30454"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00030454","sets":["673:674:675"]},"author_link":["101259","101260","101261","101262","101263","101264","101265","101266","101267","101268"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2020-06-01","bibliographicIssueDateType":"Issued"},"bibliographicPageStart":"125643","bibliographicVolumeNumber":"539","bibliographic_titles":[{"bibliographic_title":"Journal of Crystal Growth","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Lattice bow generated by 40 µm thick HVPE homoepitaxial layers on commercial free-standing, ammonothermal and HVPE GaN wafers was studied. While a change in lattice bow was measured for all wafers, the additional bow on the ammonothermal GaN wafers was minimal. The main driving force for the observed increase in the lattice bow for HVPE wafers was related to stress in the films generated by the elongation of dislocations via climb and generation of new dislocations at the homoepitaxial interface. Lattice bow is a crucial wafer parameter as it determines the variation of the offcut across the surface. If an offcut variation of 0.1° is allowed for desired control surface morphology, composition of alloys, and uniformity of doping on this surface, the measured bow on the two HVPE GaN wafers and one ammonothermal GaN wafer limits their uniformity-diameter to ~0.5″, 1″ and >4″, respectively.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"ファイル公開：2022-06-01","subitem_description_language":"ja","subitem_description_type":"Other"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Elsevier","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1016/j.jcrysgro.2020.125643","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"© 2020. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"author"}]},"item_10_source_id_61":{"attribute_name":"ISSN（print）","attribute_value_mlt":[{"subitem_source_identifier":"0022-0248","subitem_source_identifier_type":"PISSN"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Liu, Qiang","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"101259","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Fujimoto, Naoki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"101260","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Shen, Jian","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"101261","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nitta, Shugo","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"101262","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Tanaka, Atsushi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"101263","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Honda, Yoshio","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"101264","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sitar, Zlatko","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"101265","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Boćkowski, Michał","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"101266","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kumagai, Yoshinao","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"101267","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Amano, Hiroshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"101268","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2022-06-01"}],"displaytype":"detail","filename":"Manuscript_final.pdf","filesize":[{"value":"937.3 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"Manuscript_final","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/30454/files/Manuscript_final.pdf"},"version_id":"b7e2031a-2a8b-42f3-981c-2d74829033e0"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"attice bow","subitem_subject_scheme":"Other"},{"subitem_subject":"hick GaN homoepitaxy","subitem_subject_scheme":"Other"},{"subitem_subject":"itrides","subitem_subject_scheme":"Other"},{"subitem_subject":"emiconducting III-V materials","subitem_subject_scheme":"Other"},{"subitem_subject":"ertical power devices","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Lattice bow in thick, homoepitaxial GaN layers for vertical power devices","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Lattice bow in thick, homoepitaxial GaN layers for vertical power devices","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["675"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2020-09-16"},"publish_date":"2020-09-16","publish_status":"0","recid":"30454","relation_version_is_last":true,"title":["Lattice bow in thick, homoepitaxial GaN layers for vertical power devices"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:45:38.790684+00:00"}