{"_buckets": {"deposit": "e838c26e-6fb8-49a1-9fe1-87fc8f69ab30"}, "_deposit": {"id": "30455", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "30455"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00030455"}, "item_10_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2020-05-07", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "5", "bibliographicPageStart": "056502", "bibliographicVolumeNumber": "59", "bibliographic_titles": [{"bibliographic_title": "Japanese Journal of Applied Physics"}]}]}, "item_10_description_4": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "Magnesium (Mg) ion implantation into gallium nitride (GaN) at 1000 \u00b0C is proposed. Since ion implantation and annealing occur simultaneously in high-temperature implantation, it is considered that Mg ions can be introduced at an appropriate position upon their implantation. GaN vertical diodes implanted with Mg ions were fabricated and current\u2013voltage measurements were performed. As a result, clear rectifying properties were confirmed in a sample that was implanted with Mg ions at 1000 \u00b0C and annealed after implantation. However, the sample subjected to Mg ion implantation at RT and annealed after implantation showed no clear rectification. These results show that high-temperature implantation of Mg ions at 1000 \u00b0C reduces Mg ion implantation-induced damage and simultaneously activates Mg ions upon their implantation.", "subitem_description_type": "Abstract"}]}, "item_10_description_5": {"attribute_name": "\u5185\u5bb9\u8a18\u8ff0", "attribute_value_mlt": [{"subitem_description": "\u30d5\u30a1\u30a4\u30eb\u516c\u958b\uff1a2021-05-07", "subitem_description_type": "Other"}]}, "item_10_publisher_32": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "IOP publishing"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "  https://doi.org/10.35848/1347-4065/ab8b3d", "subitem_relation_type_select": "DOI"}}]}, "item_10_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "This is an author-created, un-copyedited version of an article published in {Japanese Journal of Applied Physics}. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at {https://doi.org/10.35848/1347-4065/ab8b3d}.\u3000\u201cThis Accepted Manuscript is available for reuse under a CC BY-NC-ND 4.0 licence after the 12 month embargo period provided that all the terms of the licence are adhered to\u201d"}]}, "item_10_select_15": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "author"}]}, "item_10_source_id_61": {"attribute_name": "ISSN\uff08print\uff09", "attribute_value_mlt": [{"subitem_source_identifier": "0021-4922", "subitem_source_identifier_type": "ISSN"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Takahashi, Masahiro"}], "nameIdentifiers": [{"nameIdentifier": "101269", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Tanaka, Atsushi"}], "nameIdentifiers": [{"nameIdentifier": "101270", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ando, Yuto"}], "nameIdentifiers": [{"nameIdentifier": "101271", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Watanabe, Hirotaka"}], "nameIdentifiers": [{"nameIdentifier": "101272", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Deki, Manato"}], "nameIdentifiers": [{"nameIdentifier": "101273", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kushimoto, Maki"}], "nameIdentifiers": [{"nameIdentifier": "101274", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Nitta, Shugo"}], "nameIdentifiers": [{"nameIdentifier": "101275", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Honda, Yoshio"}], "nameIdentifiers": [{"nameIdentifier": "101276", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Shima, Kohei"}], "nameIdentifiers": [{"nameIdentifier": "101277", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kojima, Kazunobu"}], "nameIdentifiers": [{"nameIdentifier": "101278", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Chichibu, Shigefusa F."}], "nameIdentifiers": [{"nameIdentifier": "101279", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Amano, Hiroshi"}], "nameIdentifiers": [{"nameIdentifier": "101280", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2021-05-07"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "RevisionVer1_JJAP-ManuscriptTakahashi2020302.pdf", "filesize": [{"value": "906.8 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 906800.0, "url": {"label": "RevisionVer1_JJAP-ManuscriptTakahashi2020302", "url": "https://nagoya.repo.nii.ac.jp/record/30455/files/RevisionVer1_JJAP-ManuscriptTakahashi2020302.pdf"}, "version_id": "743ec82b-5568-4f75-b03b-9dfedb306a0c"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Impact of high-temperature implantation of Mg ions into GaN", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Impact of high-temperature implantation of Mg ions into GaN"}]}, "item_type_id": "10", "owner": "1", "path": ["673/674/675"], "permalink_uri": "http://hdl.handle.net/2237/00032640", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_name_i18n": "\u516c\u958b\u65e5", "attribute_value": "2020-09-16"}, "publish_date": "2020-09-16", "publish_status": "0", "recid": "30455", "relation": {}, "relation_version_is_last": true, "title": ["Impact of high-temperature implantation of Mg ions into GaN"], "weko_shared_id": null}