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  1. F200 未来材料・システム研究所
  2. F200a 雑誌掲載論文
  3. 学術雑誌

Impact of high-temperature implantation of Mg ions into GaN

http://hdl.handle.net/2237/00032640
http://hdl.handle.net/2237/00032640
6bf3b1e7-aa7d-4b84-bc98-495b3897e1d9
名前 / ファイル ライセンス アクション
RevisionVer1_JJAP-ManuscriptTakahashi2020302.pdf RevisionVer1_JJAP-ManuscriptTakahashi2020302 (906.8 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2020-09-16
タイトル
タイトル Impact of high-temperature implantation of Mg ions into GaN
言語 en
著者 Takahashi, Masahiro

× Takahashi, Masahiro

WEKO 101269

en Takahashi, Masahiro

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Tanaka, Atsushi

× Tanaka, Atsushi

WEKO 101270

en Tanaka, Atsushi

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Ando, Yuto

× Ando, Yuto

WEKO 101271

en Ando, Yuto

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Watanabe, Hirotaka

× Watanabe, Hirotaka

WEKO 101272

en Watanabe, Hirotaka

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Deki, Manato

× Deki, Manato

WEKO 101273

en Deki, Manato

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Kushimoto, Maki

× Kushimoto, Maki

WEKO 101274

en Kushimoto, Maki

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Nitta, Shugo

× Nitta, Shugo

WEKO 101275

en Nitta, Shugo

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Honda, Yoshio

× Honda, Yoshio

WEKO 101276

en Honda, Yoshio

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Shima, Kohei

× Shima, Kohei

WEKO 101277

en Shima, Kohei

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Kojima, Kazunobu

× Kojima, Kazunobu

WEKO 101278

en Kojima, Kazunobu

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Chichibu, Shigefusa F.

× Chichibu, Shigefusa F.

WEKO 101279

en Chichibu, Shigefusa F.

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Amano, Hiroshi

× Amano, Hiroshi

WEKO 101280

en Amano, Hiroshi

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アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 This is an author-created, un-copyedited version of an article published in {Japanese Journal of Applied Physics}. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at {https://doi.org/10.35848/1347-4065/ab8b3d}. “This Accepted Manuscript is available for reuse under a CC BY-NC-ND 4.0 licence after the 12 month embargo period provided that all the terms of the licence are adhered to”
抄録
内容記述 Magnesium (Mg) ion implantation into gallium nitride (GaN) at 1000 °C is proposed. Since ion implantation and annealing occur simultaneously in high-temperature implantation, it is considered that Mg ions can be introduced at an appropriate position upon their implantation. GaN vertical diodes implanted with Mg ions were fabricated and current–voltage measurements were performed. As a result, clear rectifying properties were confirmed in a sample that was implanted with Mg ions at 1000 °C and annealed after implantation. However, the sample subjected to Mg ion implantation at RT and annealed after implantation showed no clear rectification. These results show that high-temperature implantation of Mg ions at 1000 °C reduces Mg ion implantation-induced damage and simultaneously activates Mg ions upon their implantation.
言語 en
内容記述タイプ Abstract
内容記述
内容記述 ファイル公開:2021-05-07
言語 ja
内容記述タイプ Other
出版者
言語 en
出版者 IOP publishing
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.35848/1347-4065/ab8b3d
ISSN(print)
収録物識別子タイプ PISSN
収録物識別子 0021-4922
書誌情報 en : Japanese Journal of Applied Physics

巻 59, 号 5, p. 056502, 発行日 2020-05-07
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