{"created":"2021-03-01T06:38:46.628018+00:00","id":30456,"links":{},"metadata":{"_buckets":{"deposit":"49874357-509e-4f45-9db4-cd0bdaa845e4"},"_deposit":{"id":"30456","owners":[],"pid":{"revision_id":0,"type":"depid","value":"30456"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00030456","sets":["673:674:675"]},"author_link":["101281","101282","101283","101284","101285"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2020-01-29","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"3","bibliographicPageStart":"035004","bibliographicVolumeNumber":"35","bibliographic_titles":[{"bibliographic_title":"Semiconductor Science and Technology","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Indium incorporation and the optical properties of Inx Al1−x N layers (0 ≤ x ≤ 0.45) grown by metal-organic vapour phase epitaxy have been investigated simultaneously on polar (0001), untwinned semipolar (10overline 13) and nonpolar (10overline 10) AlN templates, which were prepared on planar sapphire substrates. The InN mole fraction XInN of the layers was tuned by changing growth temperature from 660°C to 860°C. XInN determined by x-ray diffraction was found to be comparable for the polar, semipolar and nonpolar surface orientations. This is consistent with comparable effective bandgap energy of the layers obtained from optical transmission measurements at room temperature. The bandgap bowing parameter was found to be strongly composition-dependent. Room-temperature photoluminescence measurements showed impurity transitions for the layers with XInN ≤ 0.2, while InAlN near-band-edge luminescence was observed for the layers with higher XInN.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"ファイル公開：2021-01-29","subitem_description_language":"ja","subitem_description_type":"Other"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IOP publishing","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1088/1361-6641/ab63f1","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"This is an author-created, un-copyedited version of an article published in {Semiconductor Science and Technology}. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at {https://doi.org/10.1088/1361-6641/ab63f1}.　“This Accepted Manuscript is available for reuse under a CC BY-NC-ND 4.0 licence after the 12 month embargo period provided that all the terms of the licence are adhered to”","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"author"}]},"item_10_source_id_61":{"attribute_name":"ISSN（print）","attribute_value_mlt":[{"subitem_source_identifier":"0268-1242","subitem_source_identifier_type":"PISSN"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Dinh, Duc V","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"101281","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Hu, Nan","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"101282","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Honda, Yoshio","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"101283","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Amano, Hiroshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"101284","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Pristovsek, Markus","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"101285","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2021-01-29"}],"displaytype":"detail","filename":"1st_InAlN_circulation_CBA.pdf","filesize":[{"value":"791.5 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"1st_InAlN_circulation_CBA","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/30456/files/1st_InAlN_circulation_CBA.pdf"},"version_id":"b53a9958-42b0-44c6-ae6b-eb3673b147d3"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Indium incorporation and optical properties of polar, semipolar and nonpolar InAlN","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Indium incorporation and optical properties of polar, semipolar and nonpolar InAlN","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["675"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2020-09-16"},"publish_date":"2020-09-16","publish_status":"0","recid":"30456","relation_version_is_last":true,"title":["Indium incorporation and optical properties of polar, semipolar and nonpolar InAlN"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:45:39.836577+00:00"}