@article{oai:nagoya.repo.nii.ac.jp:00030458, author = {Ohnishi, Kazuki and Amano, Yuki and Fujimoto, Naoki and Nitta, Shugo and Honda, Yoshio and Amano, Hiroshi}, issue = {6}, journal = {Applied Physics Express}, month = {Jun}, note = {Halide vapor phase epitaxy of p-type GaN:Mg films was realized by using solid MgO as the Mg source. The Mg concentration was controlled by supplying HCl gas in a MgO source zone. Mg-related photoluminescence peaks were observed at around 3.3 and 2.9 eV. For a sample with a Mg concentration of 2.8 × 10^19 cm^−3, the Hall-effect measurement showed p-type conduction with a hole concentration and a hole mobility of 1.3 × 10^17 cm^−3 and 9.1 cm^2 V^−1 s^−1, respectively, at room temperature. The Mg acceptor level was 232 ± 15 meV, which is in good agreement with the previous report., ファイル公開:2021-06-01}, title = {Halide vapor phase epitaxy of p-type Mg-doped GaN utilizing MgO}, volume = {13}, year = {2020} }