{"created":"2021-03-01T06:38:46.761576+00:00","id":30458,"links":{},"metadata":{"_buckets":{"deposit":"a23affff-d946-4cf7-a69a-f5793a5541ed"},"_deposit":{"id":"30458","owners":[],"pid":{"revision_id":0,"type":"depid","value":"30458"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00030458","sets":["673:674:675"]},"author_link":["101287","101288","101289","101290","101291","101292"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2020-06","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"6","bibliographicPageStart":"061007","bibliographicVolumeNumber":"13","bibliographic_titles":[{"bibliographic_title":"Applied Physics Express","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Halide vapor phase epitaxy of p-type GaN:Mg films was realized by using solid MgO as the Mg source. The Mg concentration was controlled by supplying HCl gas in a MgO source zone. Mg-related photoluminescence peaks were observed at around 3.3 and 2.9 eV. For a sample with a Mg concentration of 2.8 × 10^19 cm^−3, the Hall-effect measurement showed p-type conduction with a hole concentration and a hole mobility of 1.3 × 10^17 cm^−3 and 9.1 cm^2 V^−1 s^−1, respectively, at room temperature. The Mg acceptor level was 232 ± 15 meV, which is in good agreement with the previous report.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"ファイル公開：2021-06-01","subitem_description_language":"ja","subitem_description_type":"Other"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IOP publishing","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.35848/1882-0786/ab9166","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"This is an author-created, un-copyedited version of an article published in {Applied Physics Express}. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at {https://doi.org/10.35848/1882-0786/ab9166}.　“This Accepted Manuscript is available for reuse under a CC BY-NC-ND 4.0 licence after the 12 month embargo period provided that all the terms of the licence are adhered to”","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"author"}]},"item_10_source_id_61":{"attribute_name":"ISSN（print）","attribute_value_mlt":[{"subitem_source_identifier":"1882-0778","subitem_source_identifier_type":"PISSN"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Ohnishi, Kazuki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"101287","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Amano, Yuki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"101288","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Fujimoto, Naoki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"101289","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nitta, Shugo","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"101290","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Honda, Yoshio","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"101291","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Amano, Hiroshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"101292","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2021-06-01"}],"displaytype":"detail","filename":"Mg-doping_Ohnishiv14_revision20200408-3.pdf","filesize":[{"value":"466.8 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"Mg-doping_Ohnishiv14_revision20200408-3","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/30458/files/Mg-doping_Ohnishiv14_revision20200408-3.pdf"},"version_id":"23577064-2dc6-4242-96d0-d9c007622b6e"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Halide vapor phase epitaxy of p-type Mg-doped GaN utilizing MgO","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Halide vapor phase epitaxy of p-type Mg-doped GaN utilizing MgO","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["675"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2020-09-17"},"publish_date":"2020-09-17","publish_status":"0","recid":"30458","relation_version_is_last":true,"title":["Halide vapor phase epitaxy of p-type Mg-doped GaN utilizing MgO"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:23:56.715179+00:00"}