{"_buckets": {"deposit": "9b88f323-016b-426f-afb0-4c6a3b5f7e1e"}, "_deposit": {"id": "30698", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "30698"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00030698", "sets": ["2545"]}, "author_link": ["101893", "101894", "101895"], "item_1615768549627": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_9_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "1992-03-31", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "2", "bibliographicPageEnd": "178", "bibliographicPageStart": "147", "bibliographicVolumeNumber": "43", "bibliographic_titles": [{"bibliographic_title": "Memoirs of the Faculty of Engineering, Nagoya University", "bibliographic_titleLang": "en"}]}]}, "item_9_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "High quality GaN and Al[x]Ga[1][-x]N (0\u003c[x]≦0.4) films have been successfully grown by the preceding deposition of a thin AlN layer as a buffer layer using metalorganic vapor phase epitaxy (MOVPE) technique. The surface morphology as well as the luminescence and electrical properties of these films are remarkably improved. The role of the buffer layer is discussed in detail on the basis of the results of X-ray studies, RHEED and SEM observations at the every stage of growth. By using the GaN film grown with the buffer layer, the first room temperature UV stimulated emission has been realized, which indicates that the film is of high quality. The AIN buffer layer has been proven to be also effective for the growth of high quality Zn-doped GaN, Mg-doped GaN and Mg-doped Al[x]Ga[1][-x]N (x≦0.1) films on both sapphire A-face as well as C-face substrate. The nature of Zn-related luminescence centers and their density are found to be strongly affected by growth conditions, in particular, the substrate temperature. The best record of luminous intensity about 102 mcd at 10 mA can be achieved by mis-type LED using Zn-doped i-layer grown on A-face substrate. GaN and Al[x]Ga[1][-x]N(x≦0.1) having distinct p-type conduction are realized by Mg doping and subsequent low energy electron beam irradiation (LEEBI) treatment, for the first time. We have found that the intensity of blue emission in Mg-doped GaN, Mg-doped Al[x]Ga[1][-x]N or Zn-doped GaN is remarkably enhanced keeping the spectrum of the same shape by the LEEBI treatment, which is extremely important and interesting. AlGaN/GaN multi-heterostructure p-n junction type UV/blue light emitting devices with a high performance have been developed. The multi-layeredstructure shows the distinct quantum size effect, for the first time, from nitridebased wurtzite-type quantum wells.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_9_identifier_registration": {"attribute_name": "ID登録", "attribute_value_mlt": [{"subitem_identifier_reg_text": "10.18999/memfenu.43.2.147", "subitem_identifier_reg_type": "JaLC"}]}, "item_9_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "Faculty of Engineering, Nagoya University", "subitem_publisher_language": "en"}]}, "item_9_select_15": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_9_source_id_7": {"attribute_name": "ISSN（print）", "attribute_value_mlt": [{"subitem_source_identifier": "0027-7657", "subitem_source_identifier_type": "PISSN"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Akasaki, Isamu", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "101893", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hiramatsu, Kazumasa", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "101894", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Amano, Hiroshi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "101895", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2020-10-29"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "43-2-01.pdf", "filesize": [{"value": "5.6 MB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 5600000.0, "url": {"label": "43-2-01.pdf", "objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/30698/files/43-2-01.pdf"}, "version_id": "11a9f73d-962c-4559-ac73-09626fd599bc"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "departmental bulletin paper", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "MOVPE growth of GaN and AlxGa1-xN and their luminescence and electrical properties", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "MOVPE growth of GaN and AlxGa1-xN and their luminescence and electrical properties", "subitem_title_language": "en"}]}, "item_type_id": "9", "owner": "1", "path": ["2545"], "permalink_uri": "https://doi.org/10.18999/memfenu.43.2.147", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2020-10-29"}, "publish_date": "2020-10-29", "publish_status": "0", "recid": "30698", "relation": {}, "relation_version_is_last": true, "title": ["MOVPE growth of GaN and AlxGa1-xN and their luminescence and electrical properties"], "weko_shared_id": -1}