@article{oai:nagoya.repo.nii.ac.jp:00030768,
 author = {Hiramatsu, Kazumasa and Akasaki, Isamu and Sawaki, Nobuhiko},
 issue = {2},
 journal = {Memoirs of the Faculty of Engineering, Nagoya University},
 month = {Mar},
 note = {Effects of various growth conditions on surface morphology and compositional non-uniformity of LPE (liquid phase epitaxy) layers of In[x]Ga[1][-x]As[y]P[1][-y] (y＜0.01) on　(100) GaAs are studied. (1) Growth conditions to obtain a smooth and uniform layer is found from results of change in the surface morphology. (2) The interface instability occurring under an undercooling condition in LPE process is studied by means of analysis of Fourier spectra of the surface morphology. (3) Compositional nonuniformity of InGaAsP LPE layers are investigated by means of the precision X-ray diffractometry. The compositional variation taking place at the initial growth stage during several seconds is found. The variation at the initial stage is analyzed theoretically by "growth lines" on an In-Ga-P phase diagram due to the diffusion-limited growth model by comparison with the experiments. Growth conditions to minimize the compositional variation is proposed.},
 pages = {183--207},
 title = {LPE growth of InGaAsP epitaxial layers on GaAs substrates},
 volume = {38},
 year = {1987}
}