@article{oai:nagoya.repo.nii.ac.jp:00030890,
 author = {Shiomi, Shigeru and Uchiyama, Susumu},
 issue = {1},
 journal = {Memoirs of the Faculty of Engineering, Nagoya University},
 month = {Nov},
 note = {The effect of the ion-implanted surface layer on the relationship between the bubble deflection angle θ and the in-plane field H_ip is investigated. The samples used are either etched a part of the surface layer implanted Ne^+ ions of l00 keV to a dosage of 7×10^13 cm^-2 or implanted to various dosages. In the samples implanted to a dosage of 7×10^13 cm^-2, it is found that the effective layer determining the wall structure of the underlying bubble exists in the region between 500 and 800 Å deep from the surface. In the sample implanted to as high dosage as 10^15 cm^-2, θ varies with increasing and then dcereasing H_ip gradually rather than abruptly as generally seen. These results are interpreted based on the relevant works on the magnetic properties of the ion-implanted layer and the bubble state transitions.},
 pages = {143--157},
 title = {Effect of surface layer etching and ion-dosage on bubble state transition in ion-implanted garnet films},
 volume = {32},
 year = {1980}
}