{"created":"2021-03-01T06:39:15.560439+00:00","id":30890,"links":{},"metadata":{"_buckets":{"deposit":"562572d5-6488-4f8c-840c-7393245182c0"},"_deposit":{"id":"30890","owners":[],"pid":{"revision_id":0,"type":"depid","value":"30890"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00030890","sets":["320:2524:2544:2588"]},"author_link":["102238","102239"],"item_1615768549627":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_9_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1980-11-30","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"1","bibliographicPageEnd":"157","bibliographicPageStart":"143","bibliographicVolumeNumber":"32","bibliographic_titles":[{"bibliographic_title":"Memoirs of the Faculty of Engineering, Nagoya University","bibliographic_titleLang":"en"}]}]},"item_9_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The effect of the ion-implanted surface layer on the relationship between the bubble deflection angle θ and the in-plane field H_ip is investigated. The samples used are either etched a part of the surface layer implanted Ne^+ ions of l00 keV to a dosage of 7×10^13 cm^-2 or implanted to various dosages. In the samples implanted to a dosage of 7×10^13 cm^-2, it is found that the effective layer determining the wall structure of the underlying bubble exists in the region between 500 and 800 Å deep from the surface. In the sample implanted to as high dosage as 10^15 cm^-2, θ varies with increasing and then dcereasing H_ip gradually rather than abruptly as generally seen. These results are interpreted based on the relevant works on the magnetic properties of the ion-implanted layer and the bubble state transitions.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_9_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.18999/memfenu.32.1.143","subitem_identifier_reg_type":"JaLC"}]},"item_9_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Faculty of Engineering, Nagoya University","subitem_publisher_language":"en"}]},"item_9_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_9_source_id_7":{"attribute_name":"ISSN（print）","attribute_value_mlt":[{"subitem_source_identifier":"0027-7657","subitem_source_identifier_type":"PISSN"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Shiomi, Shigeru","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"102238","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Uchiyama, Susumu","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"102239","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-11-24"}],"displaytype":"detail","filename":"32-1-03.pdf","filesize":[{"value":"1.5 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"32-1-03.pdf","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/30890/files/32-1-03.pdf"},"version_id":"09043430-a5b7-4279-b111-4c1d60741c95"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Effect of surface layer etching and ion-dosage on bubble state transition in ion-implanted garnet films","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Effect of surface layer etching and ion-dosage on bubble state transition in ion-implanted garnet films","subitem_title_language":"en"}]},"item_type_id":"9","owner":"1","path":["2588"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2020-11-24"},"publish_date":"2020-11-24","publish_status":"0","recid":"30890","relation_version_is_last":true,"title":["Effect of surface layer etching and ion-dosage on bubble state transition in ion-implanted garnet films"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:24:20.947398+00:00"}