{"_buckets": {"deposit": "f610341b-0aea-4986-b3d3-772900f6a6f3"}, "_deposit": {"id": "31316", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "31316"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00031316", "sets": ["322"]}, "author_link": ["103337", "103338", "103339", "103340"], "item_10_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2020-11", "bibliographicIssueDateType": "Issued"}, "bibliographicPageStart": "138361", "bibliographicVolumeNumber": "713", "bibliographic_titles": [{"bibliographic_title": "Thin Solid Films", "bibliographic_titleLang": "en"}]}]}, "item_10_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "High-quality epitaxial Bi1-xSbx (BiSb) films were formed by two-step growth using molecular beam epitaxy. The use of two-step growth, which involves lower-temperature growth at ~150 °C followed by higher-temperature (~250 °C) growth, and lattice-matched substrates such as BaF2 (111) are key to obtain high-quality BiSb films. The composition of the BiSb films can also be systematically tuned using this growth procedure. The epitaxial BiSb films showed higher crystallinity (full width at half maximum: ~0.69°) and higher mobility (~2100 cm2/Vs), which indicate that sufficient quality films were obtained. Such films are expected to pave the way for the fabrication of electronic devices using topological BiSb.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_10_description_5": {"attribute_name": "内容記述", "attribute_value_mlt": [{"subitem_description": "ファイル公開：2022-11-01", "subitem_description_language": "ja", "subitem_description_type": "Other"}]}, "item_10_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "Elsevier", "subitem_publisher_language": "en"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1016/j.tsf.2020.138361", "subitem_relation_type_select": "DOI"}}]}, "item_10_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "© 2020. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/", "subitem_rights_language": "en"}]}, "item_10_select_15": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "author"}]}, "item_10_source_id_61": {"attribute_name": "ISSN（print）", "attribute_value_mlt": [{"subitem_source_identifier": "0040-6090", "subitem_source_identifier_type": "PISSN"}]}, "item_1615787544753": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_ab4af688f83e57aa", "subitem_version_type": "AM"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Ueda, K.", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "103337", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hadate, Y.", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "103338", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Suzuki, K.", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "103339", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Asano, H.", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "103340", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2022-11-01"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "TSF-Ueda.pdf", "filesize": [{"value": "1.6 MB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 1600000.0, "url": {"label": "TSF-Ueda", "objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/31316/files/TSF-Ueda.pdf"}, "version_id": "5bb292a9-ae1a-4b49-9fe3-438ee79e5a30"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Fabrication of high-quality epitaxial Bi1-xSbx films by two-step growth using molecular beam epitaxy", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Fabrication of high-quality epitaxial Bi1-xSbx films by two-step growth using molecular beam epitaxy", "subitem_title_language": "en"}]}, "item_type_id": "10", "owner": "1", "path": ["322"], "permalink_uri": "http://hdl.handle.net/2237/00033496", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2021-02-09"}, "publish_date": "2021-02-09", "publish_status": "0", "recid": "31316", "relation": {}, "relation_version_is_last": true, "title": ["Fabrication of high-quality epitaxial Bi1-xSbx films by two-step growth using molecular beam epitaxy"], "weko_shared_id": -1}