{"_buckets": {"deposit": "f610341b-0aea-4986-b3d3-772900f6a6f3"}, "_deposit": {"id": "31316", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "31316"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00031316"}, "item_10_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2020-11", "bibliographicIssueDateType": "Issued"}, "bibliographicPageStart": "138361", "bibliographicVolumeNumber": "713", "bibliographic_titles": [{"bibliographic_title": "Thin Solid Films"}]}]}, "item_10_description_4": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "High-quality epitaxial Bi1-xSbx (BiSb) films were formed by two-step growth using molecular beam epitaxy. The use of two-step growth, which involves lower-temperature growth at ~150 \u00b0C followed by higher-temperature (~250 \u00b0C) growth, and lattice-matched substrates such as BaF2 (111) are key to obtain high-quality BiSb films. The composition of the BiSb films can also be systematically tuned using this growth procedure. The epitaxial BiSb films showed higher crystallinity (full width at half maximum: ~0.69\u00b0) and higher mobility (~2100 cm2/Vs), which indicate that sufficient quality films were obtained. Such films are expected to pave the way for the fabrication of electronic devices using topological BiSb.", "subitem_description_type": "Abstract"}]}, "item_10_description_5": {"attribute_name": "\u5185\u5bb9\u8a18\u8ff0", "attribute_value_mlt": [{"subitem_description": "\u30d5\u30a1\u30a4\u30eb\u516c\u958b\uff1a2022-11-01", "subitem_description_type": "Other"}]}, "item_10_publisher_32": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "Elsevier"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1016/j.tsf.2020.138361", "subitem_relation_type_select": "DOI"}}]}, "item_10_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "\u00a9 2020. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/"}]}, "item_10_select_15": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "author"}]}, "item_10_source_id_61": {"attribute_name": "ISSN\uff08print\uff09", "attribute_value_mlt": [{"subitem_source_identifier": "0040-6090", "subitem_source_identifier_type": "ISSN"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Ueda, K."}], "nameIdentifiers": [{"nameIdentifier": "103337", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hadate, Y."}], "nameIdentifiers": [{"nameIdentifier": "103338", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Suzuki, K."}], "nameIdentifiers": [{"nameIdentifier": "103339", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Asano, H."}], "nameIdentifiers": [{"nameIdentifier": "103340", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2022-11-01"}], "displaytype": "detail", "download_preview_message": "Download / Preview is available from 2022/10/31.", "file_order": 0, "filename": "TSF-Ueda.pdf", "filesize": [{"value": "1.6 MB"}], "format": "application/pdf", "future_date_message": "Download is available from 2022/10/31.", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 1600000.0, "url": {"label": "TSF-Ueda", "url": "https://nagoya.repo.nii.ac.jp/record/31316/files/TSF-Ueda.pdf"}, "version_id": "5bb292a9-ae1a-4b49-9fe3-438ee79e5a30"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Fabrication of high-quality epitaxial Bi1-xSbx films by two-step growth using molecular beam epitaxy", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Fabrication of high-quality epitaxial Bi1-xSbx films by two-step growth using molecular beam epitaxy"}]}, "item_type_id": "10", "owner": "1", "path": ["320/321/322"], "permalink_uri": "http://hdl.handle.net/2237/00033496", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_value": "2021-02-09"}, "publish_date": "2021-02-09", "publish_status": "0", "recid": "31316", "relation": {}, "relation_version_is_last": true, "title": ["Fabrication of high-quality epitaxial Bi1-xSbx films by two-step growth using molecular beam epitaxy"], "weko_shared_id": null}