@article{oai:nagoya.repo.nii.ac.jp:00031316, author = {Ueda, K. and Hadate, Y. and Suzuki, K. and Asano, H.}, journal = {Thin Solid Films}, month = {Nov}, note = {High-quality epitaxial Bi1-xSbx (BiSb) films were formed by two-step growth using molecular beam epitaxy. The use of two-step growth, which involves lower-temperature growth at ~150 °C followed by higher-temperature (~250 °C) growth, and lattice-matched substrates such as BaF2 (111) are key to obtain high-quality BiSb films. The composition of the BiSb films can also be systematically tuned using this growth procedure. The epitaxial BiSb films showed higher crystallinity (full width at half maximum: ~0.69°) and higher mobility (~2100 cm2/Vs), which indicate that sufficient quality films were obtained. Such films are expected to pave the way for the fabrication of electronic devices using topological BiSb., ファイル公開:2022-11-01}, title = {Fabrication of high-quality epitaxial Bi1-xSbx films by two-step growth using molecular beam epitaxy}, volume = {713}, year = {2020} }