{"created":"2021-03-01T06:39:43.873770+00:00","id":31316,"links":{},"metadata":{"_buckets":{"deposit":"f610341b-0aea-4986-b3d3-772900f6a6f3"},"_deposit":{"id":"31316","owners":[],"pid":{"revision_id":0,"type":"depid","value":"31316"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00031316","sets":["320:321:322"]},"author_link":["103337","103338","103339","103340"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2020-11","bibliographicIssueDateType":"Issued"},"bibliographicPageStart":"138361","bibliographicVolumeNumber":"713","bibliographic_titles":[{"bibliographic_title":"Thin Solid Films","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"High-quality epitaxial Bi1-xSbx (BiSb) films were formed by two-step growth using molecular beam epitaxy. The use of two-step growth, which involves lower-temperature growth at ~150 °C followed by higher-temperature (~250 °C) growth, and lattice-matched substrates such as BaF2 (111) are key to obtain high-quality BiSb films. The composition of the BiSb films can also be systematically tuned using this growth procedure. The epitaxial BiSb films showed higher crystallinity (full width at half maximum: ~0.69°) and higher mobility (~2100 cm2/Vs), which indicate that sufficient quality films were obtained. Such films are expected to pave the way for the fabrication of electronic devices using topological BiSb.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"ファイル公開：2022-11-01","subitem_description_language":"ja","subitem_description_type":"Other"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Elsevier","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1016/j.tsf.2020.138361","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"© 2020. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"author"}]},"item_10_source_id_61":{"attribute_name":"ISSN（print）","attribute_value_mlt":[{"subitem_source_identifier":"0040-6090","subitem_source_identifier_type":"PISSN"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Ueda, K.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"103337","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Hadate, Y.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"103338","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Suzuki, K.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"103339","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Asano, H.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"103340","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2022-11-01"}],"displaytype":"detail","filename":"TSF-Ueda.pdf","filesize":[{"value":"1.6 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"TSF-Ueda","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/31316/files/TSF-Ueda.pdf"},"version_id":"5bb292a9-ae1a-4b49-9fe3-438ee79e5a30"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Fabrication of high-quality epitaxial Bi1-xSbx films by two-step growth using molecular beam epitaxy","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Fabrication of high-quality epitaxial Bi1-xSbx films by two-step growth using molecular beam epitaxy","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["322"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2021-02-09"},"publish_date":"2021-02-09","publish_status":"0","recid":"31316","relation_version_is_last":true,"title":["Fabrication of high-quality epitaxial Bi1-xSbx films by two-step growth using molecular beam epitaxy"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:24:39.421097+00:00"}