@article{oai:nagoya.repo.nii.ac.jp:00031317,
 author = {Pristovsek, Markus and van Dinh, Duc and Liu, Ting and Ikarashi, Nobuyuki},
 issue = {11},
 journal = {Applied Physics Express},
 month = {Nov},
 note = {We report on a new member of the III-nitride family, wurtzite AlPyN1−y, tensile strained, or lattice matching (at ≈10.6% P) on (0001) GaN. Unlike lattice-matched AlInN, AlPyN1−y can be grown between 1050 °C to 1250 °C under hydrogen atmosphere in metal-organic vapor phase epitaxy. The transition from GaN to AlPyN1−y is sharp, there is no Ga carry over. Due to the small P content, physical properties like bandgap (around 5.5 eV for lattice match), dielectric function, or polarisation are close to AlN. A first unoptimized AlPN/GaN heterostructure shows a low sheet resistance of 150±50Ω/□, which makes AlPyN1−y promising for electronic applications., ファイル公開：2021-11-01},
 title = {Wurtzite AlP y N1-y : a new III-V compound semiconductor lattice-matched to GaN (0001)},
 volume = {13},
 year = {2020}
}