{"created":"2021-03-01T06:39:43.940573+00:00","id":31317,"links":{},"metadata":{"_buckets":{"deposit":"206c830c-0b39-4c28-b473-a608780fc3e5"},"_deposit":{"id":"31317","owners":[],"pid":{"revision_id":0,"type":"depid","value":"31317"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00031317","sets":["673:674:675"]},"author_link":["103341","103342","103343","103344"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2020-11","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"11","bibliographicPageStart":"111001","bibliographicVolumeNumber":"13","bibliographic_titles":[{"bibliographic_title":"Applied Physics Express","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We report on a new member of the III-nitride family, wurtzite AlPyN1−y, tensile strained, or lattice matching (at ≈10.6% P) on (0001) GaN. Unlike lattice-matched AlInN, AlPyN1−y can be grown between 1050 °C to 1250 °C under hydrogen atmosphere in metal-organic vapor phase epitaxy. The transition from GaN to AlPyN1−y is sharp, there is no Ga carry over. Due to the small P content, physical properties like bandgap (around 5.5 eV for lattice match), dielectric function, or polarisation are close to AlN. A first unoptimized AlPN/GaN heterostructure shows a low sheet resistance of 150±50Ω/□, which makes AlPyN1−y promising for electronic applications.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"ファイル公開：2021-11-01","subitem_description_language":"ja","subitem_description_type":"Other"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IOP publishing","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.35848/1882-0786/abbbca","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"This is the Accepted Manuscript version of an article accepted for publication in [Applied Physics Express].IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at [10.35848/1882-0786/abbbca]","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"author"}]},"item_10_source_id_61":{"attribute_name":"ISSN（print）","attribute_value_mlt":[{"subitem_source_identifier":"1882-0778","subitem_source_identifier_type":"PISSN"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Pristovsek, Markus","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"103341","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"van Dinh, Duc","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"103342","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Liu, Ting","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"103343","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ikarashi, Nobuyuki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"103344","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2021-11-01"}],"displaytype":"detail","filename":"AlPN-V23.pdf","filesize":[{"value":"935.7 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"AlPN-V23","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/31317/files/AlPN-V23.pdf"},"version_id":"79d12acc-f70d-4b09-8d51-aa2f4f7d8650"},{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2021-11-01"}],"displaytype":"detail","filename":"supplemental-Pristovsek-APEX.pdf","filesize":[{"value":"479.5 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"supplemental-Pristovsek-APEX","objectType":"dataset","url":"https://nagoya.repo.nii.ac.jp/record/31317/files/supplemental-Pristovsek-APEX.pdf"},"version_id":"797c7401-67c6-4f83-921f-91879b772ddb"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Wurtzite AlP y N1-y : a new III-V compound semiconductor lattice-matched to GaN (0001)","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Wurtzite AlP y N1-y : a new III-V compound semiconductor lattice-matched to GaN (0001)","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["675"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2021-02-09"},"publish_date":"2021-02-09","publish_status":"0","recid":"31317","relation_version_is_last":true,"title":["Wurtzite AlP y N1-y : a new III-V compound semiconductor lattice-matched to GaN (0001)"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:24:42.593687+00:00"}