@article{oai:nagoya.repo.nii.ac.jp:00031322,
 author = {Jodo, Shota and Iwaki, Toshihiro and Uchiyama, Kosuke and Islam, Md. Zahidul and Kataoka, Kensuke and Hayakasa, Yuki and Imaoka, Jun and Yamamoto, Masayoshi and Niitsu, Kiichi},
 issue = {SA},
 journal = {Japanese Journal of Applied Physics},
 month = {Jan},
 note = {In power electronics, the impedance of reactance components increases proportionally with frequency; therefore, the sizes of reactance components can be reduced by increasing the switching frequency. Gallium nitride (GaN)-based devices have received significant attention in high-frequency applications because the figure-of-merit of GaN is superior to that of silicon (Si). However, for high-frequency operation, a trade-off relationship between the surge voltage induced by parasitic inductances, and the switching loss becomes significant. Therefore, in this study, we propose a gate driver that improves the trade-off relationship. This gate driver was obtained via the addition of simple logic circuits and capacitors to a conventional gate driver. The effectiveness of our proposed circuit was verified via SPICE simulations with Cadence Spectre using 180 nm CMOS technology. The simulation results show that by operating at 1 MHz, this circuit can help reduce the surge voltage by 12.2% and the switching loss by 14.3%., ファイル公開：2022-01-01},
 title = {A simple gate driver design for GaN-based switching devices with improved surge voltage and switching loss at 1 MHz operation},
 volume = {60},
 year = {2021}
}