{"created":"2021-03-01T06:39:44.273375+00:00","id":31322,"links":{},"metadata":{"_buckets":{"deposit":"264ba2da-26e1-4945-ab06-f593eb6b7e9e"},"_deposit":{"id":"31322","owners":[],"pid":{"revision_id":0,"type":"depid","value":"31322"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00031322","sets":["320:321:322"]},"author_link":["103370","103371","103372","103373","103374","103375","103376","103377","103378"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2021-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"SA","bibliographicPageStart":"SAAD02","bibliographicVolumeNumber":"60","bibliographic_titles":[{"bibliographic_title":"Japanese Journal of Applied Physics","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"In power electronics, the impedance of reactance components increases proportionally with frequency; therefore, the sizes of reactance components can be reduced by increasing the switching frequency. Gallium nitride (GaN)-based devices have received significant attention in high-frequency applications because the figure-of-merit of GaN is superior to that of silicon (Si). However, for high-frequency operation, a trade-off relationship between the surge voltage induced by parasitic inductances, and the switching loss becomes significant. Therefore, in this study, we propose a gate driver that improves the trade-off relationship. This gate driver was obtained via the addition of simple logic circuits and capacitors to a conventional gate driver. The effectiveness of our proposed circuit was verified via SPICE simulations with Cadence Spectre using 180 nm CMOS technology. The simulation results show that by operating at 1 MHz, this circuit can help reduce the surge voltage by 12.2% and the switching loss by 14.3%.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"ファイル公開：2022-01-01","subitem_description_language":"ja","subitem_description_type":"Other"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IOP publishing","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.35848/1347-4065/abbdc7","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"This is the Accepted Manuscript version of an article accepted for publication in [Japanese Journal of Applied Physics].IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at [10.35848/1347-4065/abbdc7]","subitem_rights_language":"en"},{"subitem_rights":"“This Accepted Manuscript is available for reuse under a CC BY-NC-ND licence after the 12 month embargo period provided that all the terms of the licence are adhered to”","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"author"}]},"item_10_source_id_61":{"attribute_name":"ISSN（print）","attribute_value_mlt":[{"subitem_source_identifier":"0021-4922","subitem_source_identifier_type":"PISSN"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Jodo, Shota","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"103370","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Iwaki, Toshihiro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"103371","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Uchiyama, Kosuke","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"103372","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Islam, Md. Zahidul","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"103373","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kataoka, Kensuke","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"103374","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Hayakasa, Yuki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"103375","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Imaoka, Jun","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"103376","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yamamoto, Masayoshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"103377","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Niitsu, Kiichi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"103378","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2022-01-01"}],"displaytype":"detail","filename":"JJAP_sourcefile_Jodo.pdf","filesize":[{"value":"911.3 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"JJAP_sourcefile_Jodo","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/31322/files/JJAP_sourcefile_Jodo.pdf"},"version_id":"3efd40a7-f2ef-4bfa-8cba-32137bcf7049"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"A simple gate driver design for GaN-based switching devices with improved surge voltage and switching loss at 1 MHz operation","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"A simple gate driver design for GaN-based switching devices with improved surge voltage and switching loss at 1 MHz operation","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["322"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2021-02-09"},"publish_date":"2021-02-09","publish_status":"0","recid":"31322","relation_version_is_last":true,"title":["A simple gate driver design for GaN-based switching devices with improved surge voltage and switching loss at 1 MHz operation"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:24:48.956578+00:00"}