{"created":"2021-03-01T06:39:45.266119+00:00","id":31337,"links":{},"metadata":{"_buckets":{"deposit":"7caa34c8-8ea3-43bf-8f8e-8adc02610a83"},"_deposit":{"id":"31337","owners":[],"pid":{"revision_id":0,"type":"depid","value":"31337"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00031337","sets":["673:674:675"]},"author_link":["103462","103463","103464","103465","103466","103467","103468","103469","103470"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2020-09","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"10","bibliographicPageStart":"102102","bibliographicVolumeNumber":"117","bibliographic_titles":[{"bibliographic_title":"Applied Physics Letters","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Ni/Al2O3/GaN structures with vicinal GaN surfaces from the c- or m-plane were formed. Then, electrical interface properties of the structures were systematically investigated. It was found that interface state density (Dit) at the Al2O3/GaN interface for the c-plane is higher than that for the m-plane, and post-metallization annealing is quite effective to reduce Dit for both c- and m-planes. As a result, the low Dit value of ∼ 3 × 1010 eV−1 cm−2 was demonstrated for both planes.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"AIP Publishing","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1063/5.0010774","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright 2020 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.The following article appeared in (Applied Physics Letters. v.117, n.10, 2020, p.102102) and may be found at (http://dx.doi.org/10.1063/5.0010774).","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"author"}]},"item_10_source_id_61":{"attribute_name":"ISSN（print）","attribute_value_mlt":[{"subitem_source_identifier":"0003-6951","subitem_source_identifier_type":"PISSN"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Ando, Yuto","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"103462","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nagamatsu, Kentaro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"103463","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Deki, Manato","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"103464","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Taoka, Noriyuki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"103465","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Tanaka, Atsushi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"103466","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nitta, Shugo","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"103467","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Honda, Yoshio","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"103468","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nakamura, Tohru","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"103469","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Amano, Hiroshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"103470","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2021-02-10"}],"displaytype":"detail","filename":"APL20-AR-03033R.pdf","filesize":[{"value":"856.3 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"APL20-AR-03033R","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/31337/files/APL20-AR-03033R.pdf"},"version_id":"6f59f0bb-2e71-433f-9d1a-b0c1dd721608"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["675"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2021-02-10"},"publish_date":"2021-02-10","publish_status":"0","recid":"31337","relation_version_is_last":true,"title":["Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:45:40.406471+00:00"}