{"created":"2021-03-01T06:39:45.397861+00:00","id":31339,"links":{},"metadata":{"_buckets":{"deposit":"f8c4cd79-58b0-41b6-a5cd-3ef4d3ebc750"},"_deposit":{"id":"31339","owners":[],"pid":{"revision_id":0,"type":"depid","value":"31339"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00031339","sets":["673:674:675"]},"author_link":["103475","103476","103477","103478","103479","103480","103481"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2020-11","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"11","bibliographicPageStart":"115005","bibliographicVolumeNumber":"35","bibliographic_titles":[{"bibliographic_title":"Semiconductor Science and Technology","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We show evidence that tunnel junctions (TJs) in GaN grown by metal-organic vapor phase epitaxy are dominated by defect level-assisted tunneling. This is in contrast with the common belief that highly doped layers (>10^20 cm^−3) are required to narrow the TJ space charge region and promote the band-to-band tunneling. Our conclusion stems from the study and the review of the major doping limitations of carefully optimized p^++ and n^++ layers. The secondary ions mass spectroscopy profiles of GaN based TJ LEDs show a strong oxygen concentration located close to the p^++/n^++ interface, typical for three dimensional growth. In addition, considering the doping limitation asymmetry and Mg carry-over, our simulations indicate a depletion region of more than 10 nm which is buried in a rough and defective n^++ layer. However, decent electrical characteristics of the studied TJ based LEDs are obtained, with a low penalty voltage of 1.1 V and a specific differential resistance of about 10^–2 Ω.cm^2 at 20 mA. This indicates that a common TJ could be greatly optimized by using a moderate doping (~10^19 cm^−3) while intentionally introducing local defects within the TJ.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"ファイル公開：2021-11-01","subitem_description_language":"ja","subitem_description_type":"Other"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IOP publishing","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1088/1361-6641/abad73","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"This is the Accepted Manuscript version of an article accepted for publication in [Semiconductor Science and Technology].IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at [10.1088/1361-6641/abad73].","subitem_rights_language":"en"},{"subitem_rights":"“This Accepted Manuscript is available for reuse under a CC BY-NC-ND licence after the 12 month embargo period provided that all the terms of the licence are adhered to”","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"author"}]},"item_10_source_id_61":{"attribute_name":"ISSN（print）","attribute_value_mlt":[{"subitem_source_identifier":"0268-1242","subitem_source_identifier_type":"PISSN"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Robin, Y","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"103475","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Bournet, Q","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"103476","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Avit, G","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"103477","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Pristovsek, M","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"103478","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"André, Y","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"103479","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Trassoudaine, A","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"103480","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Amano, H","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"103481","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2021-11-01"}],"displaytype":"detail","filename":"YR-Tunneljunction-manuscript-VF.pdf","filesize":[{"value":"1.1 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"YR-Tunneljunction-manuscript-VF","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/31339/files/YR-Tunneljunction-manuscript-VF.pdf"},"version_id":"328fdebc-da92-4abb-97eb-7bcf1b567d18"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Limitation of simple np-n tunnel junction based LEDs grown by metal-organic vapor phase epitaxy","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Limitation of simple np-n tunnel junction based LEDs grown by metal-organic vapor phase epitaxy","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["675"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2021-02-10"},"publish_date":"2021-02-10","publish_status":"0","recid":"31339","relation_version_is_last":true,"title":["Limitation of simple np-n tunnel junction based LEDs grown by metal-organic vapor phase epitaxy"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:24:55.489436+00:00"}