{"created":"2021-03-01T06:11:56.365574+00:00","id":5380,"links":{},"metadata":{"_buckets":{"deposit":"a6a97464-d0b2-4bbd-9eeb-873ea24723d2"},"_deposit":{"id":"5380","owners":[],"pid":{"revision_id":0,"type":"depid","value":"5380"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00005380","sets":["320:321:322"]},"author_link":["13721","13722","13723"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2001-08-13","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"7","bibliographicPageEnd":"957","bibliographicPageStart":"955","bibliographicVolumeNumber":"79","bibliographic_titles":[{"bibliographic_title":"Applied Physics Letters","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Using transmission electron microscopy, we have characterized defect structures in laterally overgrown GaN crystals, grown directly on SiO_2 stripe-patterned (111)Si substrates by metalorganic vapor phase epitaxy using AlGaN as an intermediate layer. The width and the period of the stripe windows were nominally 1 and 2 μm, respectively. The average threading dislocation density for a completely coalesced 2-μm-thick GaN crystal obtained on the [112]-oriented stripe-patterned substrate was ～ 2*10^9 cm^{-2}. The reduction in threading dislocation density is a consequence of the lateral growth and dislocation reactions at the coalesced front of the mask. On the other hand, valleys and pits tend to remain on the mask during the growth on the [110]-oriented stripe-patterned substrate. Cracks were present in both crystals.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/6985"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1063/1.1394716","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright (2001) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0003-6951","subitem_source_identifier_type":"PISSN"}]},"item_10_text_14":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_text_value":"application/pdf"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Tanaka, Shigeyasu","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13721","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Honda, Yoshio","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13722","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sawaki, Nobuhiko","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13723","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-02-19"}],"displaytype":"detail","filename":"ApplPhysLett_79_955.pdf","filesize":[{"value":"284.9 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"ApplPhysLett_79_955.pdf","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/5380/files/ApplPhysLett_79_955.pdf"},"version_id":"0e989145-84c1-4e6a-9995-68f0d91c2e9f"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Structural characterization of GaN laterally overgrown on a (111)Si substrate","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Structural characterization of GaN laterally overgrown on a (111)Si substrate","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["322"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2006-10-19"},"publish_date":"2006-10-19","publish_status":"0","recid":"5380","relation_version_is_last":true,"title":["Structural characterization of GaN laterally overgrown on a (111)Si substrate"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T03:50:03.731978+00:00"}