@article{oai:nagoya.repo.nii.ac.jp:00005390,
 author = {Sakai, Akira and Torige, Yuji and Okada, Masahisa and Ikeda, Hiroya and Yasuda, Yukio and Zaima, Shigeaki},
 issue = {20},
 journal = {Applied Physics Letters},
 month = {Nov},
 note = {The initial growth process of Si_{1-x-y}Ge_xC_y thin films on Si(001) surfaces is examined by scanning tunneling microscopy. The surface morphology of the film critically depends on the C fraction in the film. Evidence is presented on an atomic scale that the epitaxial growth of Si_{1-x-y}Ge_xC_y films with large C fractions is dominated by phase separation between Si–C and Si–Ge, concomitant with C condensation on the surface of the growing films. We find that the addition of a thin (1–2 ML) SiGe interlayer between the Si_{1-x-y}Ge_xC_y film and the Si substrate drastically improves the film structure, leading to a planar morphology even with large C fractions present in the film.},
 pages = {3242--3244},
 title = {Atomistic evolution of Si_{1–x–y}Ge_xC_y thin films on Si(001) surfaces},
 volume = {79},
 year = {2001}
}