{"created":"2021-03-01T06:11:56.981960+00:00","id":5390,"links":{},"metadata":{"_buckets":{"deposit":"fba9c3bb-a4d6-47a4-9ab8-c5e2042991c4"},"_deposit":{"id":"5390","owners":[],"pid":{"revision_id":0,"type":"depid","value":"5390"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00005390","sets":["320:321:322"]},"author_link":["13752","13753","13754","13755","13756","13757"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2001-11-12","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"20","bibliographicPageEnd":"3244","bibliographicPageStart":"3242","bibliographicVolumeNumber":"79","bibliographic_titles":[{"bibliographic_title":"Applied Physics Letters","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The initial growth process of Si_{1-x-y}Ge_xC_y thin films on Si(001) surfaces is examined by scanning tunneling microscopy. The surface morphology of the film critically depends on the C fraction in the film. Evidence is presented on an atomic scale that the epitaxial growth of Si_{1-x-y}Ge_xC_y films with large C fractions is dominated by phase separation between Si–C and Si–Ge, concomitant with C condensation on the surface of the growing films. We find that the addition of a thin (1–2 ML) SiGe interlayer between the Si_{1-x-y}Ge_xC_y film and the Si substrate drastically improves the film structure, leading to a planar morphology even with large C fractions present in the film.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/6994"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1063/1.1418447","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright (2001) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0003-6951","subitem_source_identifier_type":"PISSN"}]},"item_10_text_14":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_text_value":"application/pdf"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Sakai, Akira","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13752","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Torige, Yuji","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13753","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Okada, Masahisa","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13754","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ikeda, Hiroya","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13755","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yasuda, Yukio","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13756","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Zaima, Shigeaki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13757","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-02-19"}],"displaytype":"detail","filename":"ApplPhysLett_79_3242.pdf","filesize":[{"value":"392.4 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"ApplPhysLett_79_3242.pdf","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/5390/files/ApplPhysLett_79_3242.pdf"},"version_id":"d3adde42-434c-4c44-9b8f-f18eed8cca39"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Atomistic evolution of Si_{1–x–y}Ge_xC_y thin films on Si(001) surfaces","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Atomistic evolution of Si_{1–x–y}Ge_xC_y thin films on Si(001) surfaces","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["322"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2006-10-20"},"publish_date":"2006-10-20","publish_status":"0","recid":"5390","relation_version_is_last":true,"title":["Atomistic evolution of Si_{1–x–y}Ge_xC_y thin films on Si(001) surfaces"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:20:08.166553+00:00"}