@article{oai:nagoya.repo.nii.ac.jp:00005391,
 author = {Sakai, Akira and Sugimoto, Ken and Yamamoto, Takeo and Okada, Masahisa and Ikeda, Hiroya and Yasuda, Yukio and Zaima, Shigeaki},
 issue = {21},
 journal = {Applied Physics Letters},
 month = {Nov},
 note = {A method to obtain high-quality strain–relaxed SiGe buffer layers on Si(001) substrates is presented. In this method, the strain relaxation of the SiGe layer is performed using a two-step procedure. Firstly, a low-temperature-grown SiGe layer, whose surface is covered by a thin Si cap layer, is thermally annealed. At this stage, the strain is incompletely relaxed and an atomically flat surface can be realized. Then, a second SiGe layer is grown on the first layer to achieve further strain relaxation. Transmission electron microscopy has clearly revealed that dislocations are dispersively introduced into the first SiGe/Si substrate interface and thus no pile up of dislocations occurs. The formation of a periodic undulation on the growth surface of the second SiGe layer is the key to inducing a drastic reduction in the threading dislocation density.},
 pages = {3398--3400},
 title = {Reduction of threading dislocation density in SiGe layers on Si (001) using a two-step strain–relaxation procedure},
 volume = {79},
 year = {2001}
}