{"created":"2021-03-01T06:11:57.043295+00:00","id":5391,"links":{},"metadata":{"_buckets":{"deposit":"58509c34-7981-454c-ada5-a994bea2ec4c"},"_deposit":{"id":"5391","owners":[],"pid":{"revision_id":0,"type":"depid","value":"5391"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00005391","sets":["320:321:322"]},"author_link":["13758","13759","13760","13761","13762","13763","13764"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2001-11-19","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"21","bibliographicPageEnd":"3400","bibliographicPageStart":"3398","bibliographicVolumeNumber":"79","bibliographic_titles":[{"bibliographic_title":"Applied Physics Letters","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"A method to obtain high-quality strain–relaxed SiGe buffer layers on Si(001) substrates is presented. In this method, the strain relaxation of the SiGe layer is performed using a two-step procedure. Firstly, a low-temperature-grown SiGe layer, whose surface is covered by a thin Si cap layer, is thermally annealed. At this stage, the strain is incompletely relaxed and an atomically flat surface can be realized. Then, a second SiGe layer is grown on the first layer to achieve further strain relaxation. Transmission electron microscopy has clearly revealed that dislocations are dispersively introduced into the first SiGe/Si substrate interface and thus no pile up of dislocations occurs. The formation of a periodic undulation on the growth surface of the second SiGe layer is the key to inducing a drastic reduction in the threading dislocation density.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/6996"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1063/1.1419037","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright (2001) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0003-6951","subitem_source_identifier_type":"PISSN"}]},"item_10_text_14":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_text_value":"application/pdf"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Sakai, Akira","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13758","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sugimoto, Ken","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13759","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yamamoto, Takeo","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13760","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Okada, Masahisa","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13761","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ikeda, Hiroya","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13762","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yasuda, Yukio","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13763","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Zaima, Shigeaki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13764","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-02-19"}],"displaytype":"detail","filename":"ApplPhysLett_79_3398.pdf","filesize":[{"value":"258.0 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"ApplPhysLett_79_3398.pdf","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/5391/files/ApplPhysLett_79_3398.pdf"},"version_id":"c29ea8e3-837b-4d3a-9614-ab2f801e353a"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Reduction of threading dislocation density in SiGe layers on Si (001) using a two-step strain–relaxation procedure","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Reduction of threading dislocation density in SiGe layers on Si (001) using a two-step strain–relaxation procedure","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["322"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2006-10-20"},"publish_date":"2006-10-20","publish_status":"0","recid":"5391","relation_version_is_last":true,"title":["Reduction of threading dislocation density in SiGe layers on Si (001) using a two-step strain–relaxation procedure"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T03:49:53.452243+00:00"}