{"created":"2021-03-01T06:11:57.664651+00:00","id":5401,"links":{},"metadata":{"_buckets":{"deposit":"77016913-f914-4cdc-9b41-b18f28a137b9"},"_deposit":{"id":"5401","owners":[],"pid":{"revision_id":0,"type":"depid","value":"5401"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00005401","sets":["336:695:696"]},"author_link":["13804","13805","13806","13807","13808","13809","13810","13811"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2004-03-29","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"13","bibliographicPageEnd":"2414","bibliographicPageStart":"2412","bibliographicVolumeNumber":"84","bibliographic_titles":[{"bibliographic_title":"Applied Physics Letters","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Double-wall carbon nanotubes (DWNTs) have been used as channels of field-effect transistors (FETs) to obtain information on their transport characteristics. DWNTs-FETs show metallic or semiconducting behavior depending on the tube diameters. All the semiconducting DWNTs have exhibited both p- and n-type characteristics, the so-called ambipolar behavior which is absent in normal SWNTs-FETs. Comparisons between the subthreshold swing (S) factor of DWNTs and that of SWNTs indicate that DWNTs are better FET channels than SWNTs.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/7006"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1063/1.1689404","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright (2004) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0003-6951","subitem_source_identifier_type":"PISSN"}]},"item_10_text_14":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_text_value":"application/pdf"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Shimada, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13804","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sugai, Toshiki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13805","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohno, Yutaka","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13806","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kishimoto, Shigeru","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13807","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Mizutani, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13808","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yoshida, Hiromichi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13809","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Okazaki, Toshiya","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13810","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Shinohara, Hisanori","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13811","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-02-19"}],"displaytype":"detail","filename":"ApplPhysLett_84_2412.pdf","filesize":[{"value":"102.2 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"ApplPhysLett_84_2412.pdf","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/5401/files/ApplPhysLett_84_2412.pdf"},"version_id":"58b4822d-5fa6-428e-90de-e4da1bb74865"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Double-wall carbon nanotube field-effect transistors: Ambipolar transport characteristics","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Double-wall carbon nanotube field-effect transistors: Ambipolar transport characteristics","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["696"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2006-10-23"},"publish_date":"2006-10-23","publish_status":"0","recid":"5401","relation_version_is_last":true,"title":["Double-wall carbon nanotube field-effect transistors: Ambipolar transport characteristics"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T03:49:48.193100+00:00"}