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Optical and Electrical Properties of (1-101)GaN Grown on a 7°Off-Axis (001)Si Substrate
http://hdl.handle.net/2237/7007
http://hdl.handle.net/2237/70072a4a2800-b2ea-4dc5-8df5-99bb79cf261c
| 名前 / ファイル | ライセンス | アクション |
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| アイテムタイプ | 学術雑誌論文 / Journal Article(1) | |||||
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| 公開日 | 2006-10-23 | |||||
| タイトル | ||||||
| タイトル | Optical and Electrical Properties of (1-101)GaN Grown on a 7°Off-Axis (001)Si Substrate | |||||
| 言語 | en | |||||
| 著者 |
Hikosaka, T.
× Hikosaka, T.× Narita, T.× Honda, Y.× Yamaguchi, M.× Sawaki, N. |
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| アクセス権 | ||||||
| アクセス権 | open access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
| 権利 | ||||||
| 権利情報 | Copyright (2004) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||
| 言語 | en | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Uniform growth of (1-101)GaN was performed on coalesced stripes of GaN which had been prepared by selective metalorganic vapor phase epitaxy on a 7° off-axis (001)Si substrate via an AlN intermediate layer. The cathodoluminescence spectra at 4 K exhibited a donor bound excitonic emission at 358 nm followed by defect-related emission peaks at 363, 371, and 376 nm. The 363 and 376 emission bands are observed upon the coalescence region. The Hall measurements exhibited p-type conduction at 80–300 K (the hole carrier density 6.3*10^12 cm^-2 and hole mobility 278 cm^2/V s at 100 K). The activation energy of the acceptor was estimated to be 60 meV. The possible origin of the p-type conduction is discussed in relation to the unintentionally doped carbon. | |||||
| 言語 | en | |||||
| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
| タイプ | journal article | |||||
| 出版タイプ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| DOI | ||||||
| 関連タイプ | isVersionOf | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1063/1.1758300 | |||||
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| 収録物識別子タイプ | PISSN | |||||
| 収録物識別子 | 0003-6951 | |||||
| 書誌情報 |
en : Applied Physics Letters 巻 84, 号 23, p. 4717-4719, 発行日 2004-06-07 |
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| フォーマット | ||||||
| 値 | application/pdf | |||||
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| 値 | publisher | |||||
| URI | ||||||
| 識別子 | http://hdl.handle.net/2237/7007 | |||||
| 識別子タイプ | HDL | |||||