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  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

Optical and Electrical Properties of (1-101)GaN Grown on a 7°Off-Axis (001)Si Substrate

http://hdl.handle.net/2237/7007
http://hdl.handle.net/2237/7007
2a4a2800-b2ea-4dc5-8df5-99bb79cf261c
名前 / ファイル ライセンス アクション
ApplPhysLett_84_4717.pdf ApplPhysLett_84_4717.pdf (125.2 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2006-10-23
タイトル
タイトル Optical and Electrical Properties of (1-101)GaN Grown on a 7°Off-Axis (001)Si Substrate
言語 en
著者 Hikosaka, T.

× Hikosaka, T.

WEKO 13815

en Hikosaka, T.

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Narita, T.

× Narita, T.

WEKO 13816

en Narita, T.

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Honda, Y.

× Honda, Y.

WEKO 13817

en Honda, Y.

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Yamaguchi, M.

× Yamaguchi, M.

WEKO 13818

en Yamaguchi, M.

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Sawaki, N.

× Sawaki, N.

WEKO 13819

en Sawaki, N.

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アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 Copyright (2004) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
抄録
内容記述 Uniform growth of (1-101)GaN was performed on coalesced stripes of GaN which had been prepared by selective metalorganic vapor phase epitaxy on a 7° off-axis (001)Si substrate via an AlN intermediate layer. The cathodoluminescence spectra at 4 K exhibited a donor bound excitonic emission at 358 nm followed by defect-related emission peaks at 363, 371, and 376 nm. The 363 and 376 emission bands are observed upon the coalescence region. The Hall measurements exhibited p-type conduction at 80–300 K (the hole carrier density 6.3*10^12 cm^-2 and hole mobility 278 cm^2/V s at 100 K). The activation energy of the acceptor was estimated to be 60 meV. The possible origin of the p-type conduction is discussed in relation to the unintentionally doped carbon.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 American Institute of Physics
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1063/1.1758300
ISSN
収録物識別子タイプ PISSN
収録物識別子 0003-6951
書誌情報 en : Applied Physics Letters

巻 84, 号 23, p. 4717-4719, 発行日 2004-06-07
フォーマット
application/pdf
著者版フラグ
値 publisher
URI
識別子 http://hdl.handle.net/2237/7007
識別子タイプ HDL
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