{"_buckets": {"deposit": "5ee2e70a-7658-4db3-a43c-f65f499a59f7"}, "_deposit": {"id": "5403", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "5403"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00005403", "sets": ["322"]}, "author_link": ["13815", "13816", "13817", "13818", "13819"], "item_10_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2004-06-07", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "23", "bibliographicPageEnd": "4719", "bibliographicPageStart": "4717", "bibliographicVolumeNumber": "84", "bibliographic_titles": [{"bibliographic_title": "Applied Physics Letters", "bibliographic_titleLang": "en"}]}]}, "item_10_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "Uniform growth of (1-101)GaN was performed on coalesced stripes of GaN which had been prepared by selective metalorganic vapor phase epitaxy on a 7° off-axis (001)Si substrate via an AlN intermediate layer. The cathodoluminescence spectra at 4 K exhibited a donor bound excitonic emission at 358 nm followed by defect-related emission peaks at 363, 371, and 376 nm. The 363 and 376 emission bands are observed upon the coalescence region. The Hall measurements exhibited p-type conduction at 80–300 K (the hole carrier density 6.3*10^12 cm^-2 and hole mobility 278 cm^2/V s at 100 K). The activation energy of the acceptor was estimated to be 60 meV. The possible origin of the p-type conduction is discussed in relation to the unintentionally doped carbon.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/7007"}]}, "item_10_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "American Institute of Physics", "subitem_publisher_language": "en"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1063/1.1758300", "subitem_relation_type_select": "DOI"}}]}, "item_10_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "Copyright (2004) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.", "subitem_rights_language": "en"}]}, "item_10_select_15": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0003-6951", "subitem_source_identifier_type": "PISSN"}]}, "item_10_text_14": {"attribute_name": "フォーマット", "attribute_value_mlt": [{"subitem_text_value": "application/pdf"}]}, "item_1615787544753": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Hikosaka, T.", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13815", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Narita, T.", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13816", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Honda, Y.", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13817", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Yamaguchi, M.", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13818", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Sawaki, N.", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13819", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-19"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "ApplPhysLett_84_4717.pdf", "filesize": [{"value": "125.2 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 125200.0, "url": {"label": "ApplPhysLett_84_4717.pdf", "objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/5403/files/ApplPhysLett_84_4717.pdf"}, "version_id": "27a1952b-9a2f-494e-9f23-84c92813e7be"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Optical and Electrical Properties of (1-101)GaN Grown on a 7°Off-Axis (001)Si Substrate", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Optical and Electrical Properties of (1-101)GaN Grown on a 7°Off-Axis (001)Si Substrate", "subitem_title_language": "en"}]}, "item_type_id": "10", "owner": "1", "path": ["322"], "permalink_uri": "http://hdl.handle.net/2237/7007", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2006-10-23"}, "publish_date": "2006-10-23", "publish_status": "0", "recid": "5403", "relation": {}, "relation_version_is_last": true, "title": ["Optical and Electrical Properties of (1-101)GaN Grown on a 7°Off-Axis (001)Si Substrate"], "weko_shared_id": -1}