{"_buckets": {"deposit": "5ee2e70a-7658-4db3-a43c-f65f499a59f7"}, "_deposit": {"id": "5403", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "5403"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00005403"}, "item_10_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2004-06-07", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "23", "bibliographicPageEnd": "4719", "bibliographicPageStart": "4717", "bibliographicVolumeNumber": "84", "bibliographic_titles": [{"bibliographic_title": "Applied Physics Letters"}]}]}, "item_10_description_4": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "Uniform growth of (1-101)GaN was performed on coalesced stripes of GaN which had been prepared by selective metalorganic vapor phase epitaxy on a 7\u00b0 off-axis (001)Si substrate via an AlN intermediate layer. The cathodoluminescence spectra at 4 K exhibited a donor bound excitonic emission at 358 nm followed by defect-related emission peaks at 363, 371, and 376 nm. The 363 and 376 emission bands are observed upon the coalescence region. The Hall measurements exhibited p-type conduction at 80\u2013300 K (the hole carrier density 6.3*10^12 cm^-2 and hole mobility 278 cm^2/V s at 100 K). The activation energy of the acceptor was estimated to be 60 meV. The possible origin of the p-type conduction is discussed in relation to the unintentionally doped carbon.", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/7007"}]}, "item_10_publisher_32": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "American Institute of Physics"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "http://dx.doi.org/10.1063/1.1758300", "subitem_relation_type_select": "DOI"}}]}, "item_10_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "Copyright (2004) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics."}]}, "item_10_select_15": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0003-6951", "subitem_source_identifier_type": "ISSN"}]}, "item_10_text_14": {"attribute_name": "\u30d5\u30a9\u30fc\u30de\u30c3\u30c8", "attribute_value_mlt": [{"subitem_text_value": "application/pdf"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Hikosaka, T."}], "nameIdentifiers": [{"nameIdentifier": "13815", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Narita, T."}], "nameIdentifiers": [{"nameIdentifier": "13816", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Honda, Y."}], "nameIdentifiers": [{"nameIdentifier": "13817", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Yamaguchi, M."}], "nameIdentifiers": [{"nameIdentifier": "13818", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Sawaki, N."}], "nameIdentifiers": [{"nameIdentifier": "13819", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-19"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "ApplPhysLett_84_4717.pdf", "filesize": [{"value": "125.2 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 125200.0, "url": {"label": "ApplPhysLett_84_4717.pdf", "url": "https://nagoya.repo.nii.ac.jp/record/5403/files/ApplPhysLett_84_4717.pdf"}, "version_id": "27a1952b-9a2f-494e-9f23-84c92813e7be"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Optical and Electrical Properties of (1-101)GaN Grown on a 7\u00b0Off-Axis (001)Si Substrate", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Optical and Electrical Properties of (1-101)GaN Grown on a 7\u00b0Off-Axis (001)Si Substrate"}]}, "item_type_id": "10", "owner": "1", "path": ["320/321/322"], "permalink_uri": "http://hdl.handle.net/2237/7007", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_value": "2006-10-23"}, "publish_date": "2006-10-23", "publish_status": "0", "recid": "5403", "relation": {}, "relation_version_is_last": true, "title": ["Optical and Electrical Properties of (1-101)GaN Grown on a 7\u00b0Off-Axis (001)Si Substrate"], "weko_shared_id": 3}