@article{oai:nagoya.repo.nii.ac.jp:00005403,
 author = {Hikosaka, T. and Narita, T. and Honda, Y. and Yamaguchi, M. and Sawaki, N.},
 issue = {23},
 journal = {Applied Physics Letters},
 month = {Jun},
 note = {Uniform growth of (1-101)GaN was performed on coalesced stripes of GaN which had been prepared by selective metalorganic vapor phase epitaxy on a 7° off-axis (001)Si substrate via an AlN intermediate layer. The cathodoluminescence spectra at 4 K exhibited a donor bound excitonic emission at 358 nm followed by defect-related emission peaks at 363, 371, and 376 nm. The 363 and 376 emission bands are observed upon the coalescence region. The Hall measurements exhibited p-type conduction at 80–300 K (the hole carrier density 6.3*10^12 cm^-2 and hole mobility 278 cm^2/V s at 100 K). The activation energy of the acceptor was estimated to be 60 meV. The possible origin of the p-type conduction is discussed in relation to the unintentionally doped carbon.},
 pages = {4717--4719},
 title = {Optical and Electrical Properties of (1-101)GaN Grown on a 7°Off-Axis (001)Si Substrate},
 volume = {84},
 year = {2004}
}