{"created":"2021-03-01T06:11:57.787734+00:00","id":5403,"links":{},"metadata":{"_buckets":{"deposit":"5ee2e70a-7658-4db3-a43c-f65f499a59f7"},"_deposit":{"id":"5403","owners":[],"pid":{"revision_id":0,"type":"depid","value":"5403"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00005403","sets":["320:321:322"]},"author_link":["13815","13816","13817","13818","13819"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2004-06-07","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"23","bibliographicPageEnd":"4719","bibliographicPageStart":"4717","bibliographicVolumeNumber":"84","bibliographic_titles":[{"bibliographic_title":"Applied Physics Letters","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Uniform growth of (1-101)GaN was performed on coalesced stripes of GaN which had been prepared by selective metalorganic vapor phase epitaxy on a 7° off-axis (001)Si substrate via an AlN intermediate layer. The cathodoluminescence spectra at 4 K exhibited a donor bound excitonic emission at 358 nm followed by defect-related emission peaks at 363, 371, and 376 nm. The 363 and 376 emission bands are observed upon the coalescence region. The Hall measurements exhibited p-type conduction at 80–300 K (the hole carrier density 6.3*10^12 cm^-2 and hole mobility 278 cm^2/V s at 100 K). The activation energy of the acceptor was estimated to be 60 meV. The possible origin of the p-type conduction is discussed in relation to the unintentionally doped carbon.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/7007"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1063/1.1758300","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright (2004) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0003-6951","subitem_source_identifier_type":"PISSN"}]},"item_10_text_14":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_text_value":"application/pdf"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Hikosaka, T.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13815","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Narita, T.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13816","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Honda, Y.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13817","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yamaguchi, M.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13818","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sawaki, N.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13819","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-02-19"}],"displaytype":"detail","filename":"ApplPhysLett_84_4717.pdf","filesize":[{"value":"125.2 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"ApplPhysLett_84_4717.pdf","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/5403/files/ApplPhysLett_84_4717.pdf"},"version_id":"27a1952b-9a2f-494e-9f23-84c92813e7be"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Optical and Electrical Properties of (1-101)GaN Grown on a 7°Off-Axis (001)Si Substrate","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Optical and Electrical Properties of (1-101)GaN Grown on a 7°Off-Axis (001)Si Substrate","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["322"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2006-10-23"},"publish_date":"2006-10-23","publish_status":"0","recid":"5403","relation_version_is_last":true,"title":["Optical and Electrical Properties of (1-101)GaN Grown on a 7°Off-Axis (001)Si Substrate"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T03:49:56.313763+00:00"}