@article{oai:nagoya.repo.nii.ac.jp:00005409,
 author = {Nosho, Yosuke and Ohno, Yutaka and Kishimoto, Shigeru and Mizutani, Takashi},
 issue = {7},
 journal = {Applied Physics Letters},
 month = {Feb},
 note = {We have fabricated n-type carbon nanotube field effect transistors by choosing the contact metal. Single-walled carbon nanotubes were grown directly on a SiO_2 /Si substrate by chemical vapor deposition using patterned metal catalysts. Following the nanotube growth, Ca contacts with a small work function were formed by evaporating and lifting off the metal. The devices showed n-type transfer characteristics without any doping into the nanotube channel. In contrast, the devices with Pd contacts showed p-type conduction. These results can be explained by taking into account the work functions of the contact metals.},
 pages = {073105--073105},
 title = {n-type carbon nanotube field-effect transistors fabricated by using Ca contact electrodes},
 volume = {86},
 year = {2005}
}