{"created":"2021-03-01T06:11:58.162283+00:00","id":5409,"links":{},"metadata":{"_buckets":{"deposit":"c40f671f-a728-474b-8f29-3bf448ebcdee"},"_deposit":{"id":"5409","owners":[],"pid":{"revision_id":0,"type":"depid","value":"5409"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00005409","sets":["320:321:322"]},"author_link":["13850","13851","13852","13853"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2005-02-14","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"7","bibliographicPageEnd":"073105","bibliographicPageStart":"073105","bibliographicVolumeNumber":"86","bibliographic_titles":[{"bibliographic_title":"Applied Physics Letters","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We have fabricated n-type carbon nanotube field effect transistors by choosing the contact metal. Single-walled carbon nanotubes were grown directly on a SiO_2 /Si substrate by chemical vapor deposition using patterned metal catalysts. Following the nanotube growth, Ca contacts with a small work function were formed by evaporating and lifting off the metal. The devices showed n-type transfer characteristics without any doping into the nanotube channel. In contrast, the devices with Pd contacts showed p-type conduction. These results can be explained by taking into account the work functions of the contact metals.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/7014"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1063/1.1865343","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright (2005) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0003-6951","subitem_source_identifier_type":"PISSN"}]},"item_10_text_14":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_text_value":"application/pdf"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Nosho, Yosuke","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13850","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohno, Yutaka","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13851","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kishimoto, Shigeru","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13852","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Mizutani, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13853","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-02-19"}],"displaytype":"detail","filename":"ApplPhysLett_86_073105.pdf","filesize":[{"value":"128.8 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"ApplPhysLett_86_073105.pdf","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/5409/files/ApplPhysLett_86_073105.pdf"},"version_id":"1ab2af51-6b5d-4864-b324-3afa3177edab"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"n-type carbon nanotube field-effect transistors fabricated by using Ca contact electrodes","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"n-type carbon nanotube field-effect transistors fabricated by using Ca contact electrodes","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["322"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2006-10-23"},"publish_date":"2006-10-23","publish_status":"0","recid":"5409","relation_version_is_last":true,"title":["n-type carbon nanotube field-effect transistors fabricated by using Ca contact electrodes"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T03:49:59.994322+00:00"}