@article{oai:nagoya.repo.nii.ac.jp:00005410,
 author = {Sakai, Akira and Taoka, Noriyuki and Nakatsuka, Osamu and Zaima, Shigeaki and Yasuda, Yukio},
 issue = {22},
 journal = {Applied Physics Letters},
 month = {May},
 note = {We have grown strain-relaxed SiGe layers on Sis001d substrates with a pure-edge dislocation network buried at the heterointerface and analyzed dislocation morphology depending on growth conditions. The process employed here consists of pure-Ge film growth on Si(001) and subsequent high temperature annealing for solid-phase intermixing of the Ge film and Si deposited on the top to form a SiGe alloy layer. Transmission electron microscopy revealed morphological changes of shorter pure-edge dislocation segments initially formed at the Ge/Si interface into a network structure consisting of longer and regularly spaced dislocations during post-deposition annealing. The dislocation network was explicitly preserved even after the intermixing of Si and Ge and predominantly contributed to in-plane strain relaxation of the SiGe layer. Applicability of the pure-edge dislocation network to strain-relaxed SiGe buffer layers on Si(001) substrates is discussed.},
 pages = {221916--221916},
 title = {Pure-edge dislocation network for strain-relaxed SiGe/Si(001) systems},
 volume = {86},
 year = {2005}
}