{"created":"2021-03-01T06:11:58.224635+00:00","id":5410,"links":{},"metadata":{"_buckets":{"deposit":"1cbe046a-33ea-4197-9823-ddc4ff91cfdd"},"_deposit":{"id":"5410","owners":[],"pid":{"revision_id":0,"type":"depid","value":"5410"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00005410","sets":["320:321:322"]},"author_link":["13854","13855","13856","13857","13858"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2005-05-30","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"22","bibliographicPageEnd":"221916","bibliographicPageStart":"221916","bibliographicVolumeNumber":"86","bibliographic_titles":[{"bibliographic_title":"Applied Physics Letters","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We have grown strain-relaxed SiGe layers on Sis001d substrates with a pure-edge dislocation network buried at the heterointerface and analyzed dislocation morphology depending on growth conditions. The process employed here consists of pure-Ge film growth on Si(001) and subsequent high temperature annealing for solid-phase intermixing of the Ge film and Si deposited on the top to form a SiGe alloy layer. Transmission electron microscopy revealed morphological changes of shorter pure-edge dislocation segments initially formed at the Ge/Si interface into a network structure consisting of longer and regularly spaced dislocations during post-deposition annealing. The dislocation network was explicitly preserved even after the intermixing of Si and Ge and predominantly contributed to in-plane strain relaxation of the SiGe layer. Applicability of the pure-edge dislocation network to strain-relaxed SiGe buffer layers on Si(001) substrates is discussed.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/7015"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1063/1.1943493","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright (2005) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0003-6951","subitem_source_identifier_type":"PISSN"}]},"item_10_text_14":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_text_value":"application/pdf"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Sakai, Akira","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13854","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Taoka, Noriyuki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13855","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nakatsuka, Osamu","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13856","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Zaima, Shigeaki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13857","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yasuda, Yukio","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13858","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-02-19"}],"displaytype":"detail","filename":"ApplPhysLett_86_221916.pdf","filesize":[{"value":"202.4 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"ApplPhysLett_86_221916.pdf","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/5410/files/ApplPhysLett_86_221916.pdf"},"version_id":"79b6a3e1-d3b3-4450-b775-128fbb0c3fb1"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Pure-edge dislocation network for strain-relaxed SiGe/Si(001) systems","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Pure-edge dislocation network for strain-relaxed SiGe/Si(001) systems","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["322"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2006-10-23"},"publish_date":"2006-10-23","publish_status":"0","recid":"5410","relation_version_is_last":true,"title":["Pure-edge dislocation network for strain-relaxed SiGe/Si(001) systems"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T03:50:04.671715+00:00"}