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Large thermoelectric performance of heavily Nb-doped SrTiO_3 epitaxial film at high temperature
http://hdl.handle.net/2237/7016
http://hdl.handle.net/2237/7016f7791db9-c3ea-4fc0-b24b-6f0c11ed3f72
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
ApplPhysLett_87_092108.pdf (88.4 kB)
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| アイテムタイプ | 学術雑誌論文 / Journal Article(1) | |||||
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| 公開日 | 2006-10-23 | |||||
| タイトル | ||||||
| タイトル | Large thermoelectric performance of heavily Nb-doped SrTiO_3 epitaxial film at high temperature | |||||
| 言語 | en | |||||
| 著者 |
Ohta, Shingo
× Ohta, Shingo× Nomura, Takashi× Ohta, Hiromichi× Hirano, Masahiro× Hosono, Hideo× Koumoto, Kunihito |
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| アクセス権 | ||||||
| アクセス権 | open access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
| 権利 | ||||||
| 権利情報 | Copyright (2005) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||
| 言語 | en | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Carrier concentration dependence of the thermoelectric figure of merit, ZT of SrTiO_3 at high-temperature (1000 K) is clarified using heavily Nb-doped SrTiO_3 epitaxial films, which were grown on insulating (100) - oriented LaAlO_3 single-crystalline substrates by a pulsed-laser deposition method. Carrier concentration, Hall mobility, Seebeck coefficient, and thermal conductivity of Nb-doped SrTiO_3 epitaxial films were experimentally evaluated at 1000 K with an aid of theoretical analysis. ZT of Nb-doped SrTiO_3 increases with Nb concentration and it reaches ～ 0.37 (20% Nb doped), which is the largest value among n-type oxide semiconductors ever reported. | |||||
| 言語 | en | |||||
| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
| タイプ | journal article | |||||
| 出版タイプ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| DOI | ||||||
| 関連タイプ | isVersionOf | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1063/1.2035889 | |||||
| ISSN | ||||||
| 収録物識別子タイプ | PISSN | |||||
| 収録物識別子 | 0003-6951 | |||||
| 書誌情報 |
en : Applied Physics Letters 巻 87, 号 9, p. 092108-092108, 発行日 2005-08-29 |
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| フォーマット | ||||||
| 値 | application/pdf | |||||
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| 値 | publisher | |||||
| URI | ||||||
| 識別子 | http://hdl.handle.net/2237/7016 | |||||
| 識別子タイプ | HDL | |||||
