@article{oai:nagoya.repo.nii.ac.jp:00005412,
 author = {Ohta, Shingo and Nomura, Takashi and Ohta, Hiromichi and Hirano, Masahiro and Hosono, Hideo and Koumoto, Kunihito},
 issue = {9},
 journal = {Applied Physics Letters},
 month = {Aug},
 note = {Carrier concentration dependence of the thermoelectric figure of merit, ZT of SrTiO_3 at high-temperature (1000 K) is clarified using heavily Nb-doped SrTiO_3 epitaxial films, which were grown on insulating (100) - oriented LaAlO_3 single-crystalline substrates by a pulsed-laser deposition method. Carrier concentration, Hall mobility, Seebeck coefficient, and thermal conductivity of Nb-doped SrTiO_3 epitaxial films were experimentally evaluated at 1000 K with an aid of theoretical analysis. ZT of Nb-doped SrTiO_3 increases with Nb concentration and it reaches ～ 0.37 (20% Nb doped), which is the largest value among n-type oxide semiconductors ever reported.},
 pages = {092108--092108},
 title = {Large thermoelectric performance of heavily Nb-doped SrTiO_3 epitaxial film at high temperature},
 volume = {87},
 year = {2005}
}