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  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

Observation of resonant tunneling through single self-assembled InAs quantum dots using electrophotoluminescence spectroscopy

http://hdl.handle.net/2237/7032
http://hdl.handle.net/2237/7032
437e335e-def4-4a6d-a611-49db63719d97
名前 / ファイル ライセンス アクション
JApplPhys_87_4332.pdf JApplPhys_87_4332.pdf (99.0 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2006-10-24
タイトル
タイトル Observation of resonant tunneling through single self-assembled InAs quantum dots using electrophotoluminescence spectroscopy
言語 en
著者 Ohno, Y.

× Ohno, Y.

WEKO 13924

en Ohno, Y.

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Asaoka, K.

× Asaoka, K.

WEKO 13925

en Asaoka, K.

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Kishimoto, S.

× Kishimoto, S.

WEKO 13926

en Kishimoto, S.

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Maezawa, K.

× Maezawa, K.

WEKO 13927

en Maezawa, K.

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Mizutani, T.

× Mizutani, T.

WEKO 13928

en Mizutani, T.

Search repository
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 Copyright (2000) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
抄録
内容記述 The resonant tunneling through single InAs quantum dots embedded in an n-GaAs/i-Al_0.38Ga_0.62As/n-GaAs diode has been studied by using microscopic electrophotoluminescence spectroscopy. Many sharp luminescence lines which originated from single quantum dots were observed by injecting resonant electrons from the emitter to the dots. Bias dependence of a single luminescence line was investigated. The peak intensity showed triangular dependence which was similar to the current–voltage characteristics of electron resonant tunneling from three dimension to zero dimension. When the bias voltage was increased, the peak energy slightly shifted to a lower energy indicating the existence of Stark effect, and the linewidth slightly increased. The higher the luminescence energy was, the broader the linewidth was. This result agrees with the calculated resonant level width. The lifetime of resonant states was estimated to be 2.4–27 ps for luminescence linewidth of 250–22 μeV.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 American Institute of Physics
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1063/1.373074
ISSN
収録物識別子タイプ PISSN
収録物識別子 0021-8979
書誌情報 en : Journal of Applied Physics

巻 87, 号 9, p. 4332-4336, 発行日 2000-05-01
フォーマット
application/pdf
著者版フラグ
値 publisher
URI
識別子 http://hdl.handle.net/2237/7032
識別子タイプ HDL
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