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Observation of resonant tunneling through single self-assembled InAs quantum dots using electrophotoluminescence spectroscopy
http://hdl.handle.net/2237/7032
http://hdl.handle.net/2237/7032437e335e-def4-4a6d-a611-49db63719d97
名前 / ファイル | ライセンス | アクション |
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JApplPhys_87_4332.pdf (99.0 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2006-10-24 | |||||
タイトル | ||||||
タイトル | Observation of resonant tunneling through single self-assembled InAs quantum dots using electrophotoluminescence spectroscopy | |||||
言語 | en | |||||
著者 |
Ohno, Y.
× Ohno, Y.× Asaoka, K.× Kishimoto, S.× Maezawa, K.× Mizutani, T. |
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アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | Copyright (2000) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||
抄録 | ||||||
内容記述 | The resonant tunneling through single InAs quantum dots embedded in an n-GaAs/i-Al_0.38Ga_0.62As/n-GaAs diode has been studied by using microscopic electrophotoluminescence spectroscopy. Many sharp luminescence lines which originated from single quantum dots were observed by injecting resonant electrons from the emitter to the dots. Bias dependence of a single luminescence line was investigated. The peak intensity showed triangular dependence which was similar to the current–voltage characteristics of electron resonant tunneling from three dimension to zero dimension. When the bias voltage was increased, the peak energy slightly shifted to a lower energy indicating the existence of Stark effect, and the linewidth slightly increased. The higher the luminescence energy was, the broader the linewidth was. This result agrees with the calculated resonant level width. The lifetime of resonant states was estimated to be 2.4–27 ps for luminescence linewidth of 250–22 μeV. | |||||
言語 | en | |||||
内容記述タイプ | Abstract | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | American Institute of Physics | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
出版タイプ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1063/1.373074 | |||||
ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0021-8979 | |||||
書誌情報 |
en : Journal of Applied Physics 巻 87, 号 9, p. 4332-4336, 発行日 2000-05-01 |
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フォーマット | ||||||
application/pdf | ||||||
著者版フラグ | ||||||
値 | publisher | |||||
URI | ||||||
識別子 | http://hdl.handle.net/2237/7032 | |||||
識別子タイプ | HDL |