@article{oai:nagoya.repo.nii.ac.jp:00005431,
 author = {Sasaki, K. and Furukawa, H. and Kadota, K. and Suzuki, C.},
 issue = {10},
 journal = {Journal of Applied Physics},
 month = {Nov},
 note = {Surface production of CF, CF_2 , and C_2 radicals in high-density CF_4/H_2 plasmas was examined using laser-induced fluorescence spectroscopy. No significant amount of surface production was observed in pure CF_4 plasmas. The addition of H_2 into CF_4 plasmas enhanced the surface production of CF_x and C_2 from fluorocarbon film deposited on the chamber wall. The characteristics of the surface production in cw discharges are reported, in comparison with surface production in pulsed discharges. In addition, it has been found that the surface production rates are determined not by the partial pressure but by the flow rate of H_2 , suggesting the significant consumption of feedstock H_2 in discharges. The surface production of CF_x and C_2 indicates that these radicals are not the precursors for the deposition of fluorocarbon film in the CF_4/H_2 plasma. The deposition mechanism of fluorocarbon film in the CF_4/H_2 plasma is discussed, taking into account the surface production of CF_x and C_2.},
 pages = {5585--5591},
 title = {Surface production of CF, CF_2 , and C_2 radicals in high-density CF_4/H_2 plasmas},
 volume = {88},
 year = {2000}
}